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 Referred Journal Publications
  1. G. Hu, S. Hu, R. Liu, L. Wang, X. Zhou, and T.-A. Tang, "Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor," IEEE Trans. Electron Devices, Vol. 60, No. 7, pp. 2410-2414, Jul. 2013. Download PDF

    2.  
  2. S. B. Chiah, X. Zhou, and L. Yuan, "Compact Zero-Temperature Coefficient Modeling Approach for MOSFETs Based on Unified Regional Modeling of Surface Potential," IEEE Trans. Electron Devices, Vol. 60, No. 7, pp. 2164-2170, Jul. 2013. Download PDF

    3.  
  3. T. T. Le, H. Y. Yu, Y. Sun, N. Singh, X. Zhou, N. Shen, G. Q. Lo, and D. L. Kwong, "High Performance Poly-Si Vertical Nanowire Thin Film Transistor and the Inverter Demonstration," IEEE Electron Device Lett., Vol. 32, No. 6, pp. 770-772, Jun. 2011. Download PDF

    4.  
  4. X. Zhou, G. Zhu, G. H. See, K. Chandrasekaran, S. B. Chiah, and K. Y. Lim, "Unification of MOS compact models with the unified regional modeling approach," (Invited Paper), Journal of Computational Electronics, Vol. 10, No. 1, pp. 121-135, 2011. Download PDF

    5.  
  5. C. Q. Wei, Y.-Z. Xiong, X. Zhou, N. Singh, X.-J. Yuan, G. Q. Lo, L. Chan, and D.-L. Kwong, "Comparative Study of 1/f Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs," IEEE Trans. Electron Devices, Vol. 57, No. 10, pp. 2774-2779, October 2010. Download PDF

    6.  
  6. W. Chandra, L. K. Ang, and X. Zhou, “Shot noise reduction of space charge limited electron injection through a Schottky contact,” Phys. Rev. B, Vol. 81, No. 12, 125321, 2010. Download PDF

    7.  
  7. C. Q. Wei, Y.-Z. Xiong, and X. Zhou, "Test Structure for Characterization of Low-Frequency Noise in CMOS Technologies," IEEE Trans. Instr. Meas., Vol. 57, No. 7, pp. 1860-1865, July 2010. Download PDF

    8.  
  8. G. J. Zhu, X. Zhou, Y. K. Chin, K. L. Pey, J. B. Zhang, G. H. See, S. H. Lin, Y. F. Yan, and Z. H. Chen, "Subcircuit Compact Model for Dopant-Segregated Schottky Gate-All-Around Si-Nanowire MOSFETs," IEEE Trans. Electron Devices, Vol. 57, No. 4, pp. 772-781, Apr. 2010. Download PDF

    9.  
  9. Z. H. Chen, X. Zhou, and G. J. Zhu, “Effects of Translational Layer of Gate Insulator on Recombination DC Current-Voltage Lineshape in Metal-Oxide-Silicon Transistors,” Jpn. J. Appl. Phys., Vol. 48, No. 9, 091403, 2009. Download PDF

    10.  
  10. C. Q. Wei, Y.-Z. Xiong, X. Zhou, "Investigation of Low-Frequency Noise in N-Channel FinFETs From Weak to Strong Inversion," IEEE Trans. Electron Devices, Vol. 56, No. 11, pp. 2800-2810, Nov. 2009. Download PDF

    11.  
  11. C. Q. Wei, Y. Jiang, Y.-Z. Xiong, X. Zhou, N. Singh, S. C. Rustagi, G. Q. Lo, and D.-L. Kwong, "Impact of Gate Electrode on 1/f Noise of Gate-All-Around Silicon Nanowire Transistors," IEEE Electron Device Lett., Vol. 30, No. 10, pp. 1081-1083, Oct. 2009. Download PDF

    12.  
  12. C. Q. Wei, Y.-Z. Xiong, X. Zhou, N. Singh, S. C. Rustagi, G. Q. Lo, and D.-L. Kwong, "Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region," IEEE Electron Device Lett., Vol. 30, No. 6, pp. 668-671, June 2009. Download PDF

    13.  
  13. X.-F. Wang, L.-N. Zhao, Z.-H. Yao, Z.-F. Hou, M. Yee, X. Zhou, S.-H. Lin, and T.-S. Lee, "Atomistic Simulation of Gate Effect on Nanoscale Intrinsic Si Field-Effect Transistors," Int. J. Nanosci., Vol. 8, No. 1 & 2, pp. 113-117, 2009. Download PDF

    14.  
  14. G. J. Zhu, X. Zhou, T. S. Lee, L. K. Ang, G. H. See, S. H. Lin, Y. K. Chin, and K. L. Pey, "A Compact Model for Undoped Silicon-Nanowire MOSFETs with Schottky-Barrier Source/Drain," IEEE Trans. Electron Devices, Vol. 56, No. 5, pp. 1100-1109, May 2009. Download PDF

    15.  
  15. L.-N. Zhao, X.-F. Wang, Z.-H. Yao, Z.-F. Hou, M. Yee, X. Zhou, S.-H. Lin, and T.-S. Lee, "Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor," J. Comput. Electron., Vol. 7, No. 4, pp. 500-508, Dec. 2008.

    16.  
  16. G. J. Zhu, G. H. See, S. H. Lin, and X. Zhou, "“Ground-Referenced” Model for Three-Terminal Symmetric Double-Gate MOSFETs with Source/Drain Symmetry," IEEE Trans. Electron Devices, Vol. 55, No. 9, pp. 2526-2530, Sep. 2008. Download PDF

    17.  
  17. C. Q. Wei, G. H. See, X. Zhou, and L. Chan, "A New Impact-Ionization Current Model Applicable to Both Bulk and SOI MOSFETs by Considering Self-Lattice-Heating," IEEE Trans. Electron Devices, Vol. 55, No. 9, pp. 2378-2385, Sep. 2008. Download PDF

    18.  
  18. G. H. See, X. Zhou, K. Chandrasekaran, S. B. Chiah, Z. M. Zhu, C. Q. Wei, S. H. Lin, G. J. Zhu, and G. H. Lim, "A Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and Applicable to Asymmetric MOSFETs," IEEE Trans. Electron Devices, Vol. 55, No. 2, pp. 624-631, Feb. 2008. Download PDF

    19.  
  19. X. Zhou, Z. M. Zhu, S. C. Rustagi, G. H. See, G. J. Zhu, S. H. Lin, C. Q. Wei, and G. H. Lim, "Rigorous Surface-Potential Solution for Undoped Symmetric Double-Gate MOSFETs Considering Both Electrons and Holes at Quasi Nonequilibrium," IEEE Trans. Electron Devices, Vol. 55, No. 2, pp. 616-623, Feb. 2008. Download PDF

    20.  
  20. Z. Zhu, X. Zhou, S. C. Rustagi, G. H. See, S. Lin, G. Zhu, C. Wei, and J. Zhang, "Analytic and explicit current model of undoped double-gate MOSFETs," Electron. Lett., Vol. 43, No. 25, pp. 1464-1466, Dec. 2007. Download PDF

    21.  
  21. Z. M. Zhu, X. Zhou, K. Chandrasekaran, S. C. Rustagi, and G. H. See, "Explicit compact surface-potential and drain-current models for generic asymmetric double-gate MOSFETs," Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp. 2067-2072, Apr. 2007. Download PDF

    22.  
  22. W. Z. Shangguan, T. C. Au Yeung, Z. M. Zhu, and X. Zhou, "General analytical Poisson solution for undoped generic two-gated metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., Vol. 90, No. 1, 012110, Jan. 2007. Download PDF

    23.  
  23. W. Z. Shangguan, X. Zhou, K. Chandrasekaran, Z. M. Zhu, S. C. Rustagi, S. B. Chiah, and G. H. See, "Surface-potential Solution for Generic Undoped MOSFETs with Two Gates," IEEE Trans. Electron Devices, Vol. 54, No. 1, pp. 169-172, Jan. 2007. Download PDF

    24.  
  24. K. Chandrasekaran, X. Zhou, S. B. Chiah, G. H. See, and S. C. Rustagi, "Implicit Analytical Surface/Interface Potential Solutions for Modeling Strained-Si MOSFETs," IEEE Trans. Electron Devices, Vol. 53, No. 12, pp. 3110-3117, Dec. 2006. Download PDF

    25.  
  25. W. Z. Shangguan, M. Saeys, and X. Zhou, "Surface-potential solutions to the Pao-Sah voltage equation," Solid-State Electron., Vol. 50, No. 7-8, pp. 1320-1329, Jul.-Aug. 2006. Download PDF

    26.  
  26. K. Chandrasekaran, X. Zhou, S. B. Chiah, W. Z. Shangguan, and G. H. See, L. K. Bera, N. Balasubramanian, and S. C. Rustagi, "Effect of Substrate Doping on the Capacitance–Voltage Characteristics of Strained-silicon pMOSFETs," IEEE Electron Device Lett., Vol. 27, No. 1, pp. 62-64, Jan. 2006. Download PDF

    27.  
  27. K. Chandrasekaran, X. Zhou, S. B. Chiah, W. Z. Shangguan, and G. H. See, "Physics-based Single-piece Charge Model for Strained-Si MOSFETs," IEEE Trans. Electron Devices, Vol. 52, No. 7, pp. 1555-1562, Jul. 2005. Download PDF

    28.  
  28. W. Z. Shangguan, X. Zhou, S. B. Chiah, G. H. See, and K. Chandrasekaran, "Compact gate-current model based on transfer-matrix method," J. Appl. Phys., Vol. 97, 123709, Jun. 2005. Download PDF

    29.  
  29. S. B. Chiah, X. Zhou, K. Chandrasekaran, W. Z. Shangguan, G. H. See, and S. M. Pandey, "Single-piece polycrystalline silicon accumulation/depletion/inversion model with implicit/explicit surface-potential solutions," Appl. Phys. Lett., Vol. 86, No. 20, 202111, May 2005. Download PDF

    30.  
  30. X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," Solid-State Electron., Vol. 48, No. 12, pp. 2125-2131, Dec. 2004. Download PDF View Citation

    31.  
  31. S. B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004. Download PDF

    32.  
  32. X. Zhou, "The Missing Link to Seamless Simulation," (Invited Feature Article), IEEE Circuits Devices Mag., Vol. 19, No. 3, pp. 9-17, May 2003. Download PDF

    33.  
  33. K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002. Download PDF View Citation

    34.  
  34. X. Zhou and K. Y. Lim, "De-embedding Length-Dependent Edge-Leakage Current in Shallow Trench Isolation Submicron MOSFETs," Solid-State Electron., Vol. 46, No. 5, pp. 769-772, May 2002. Download PDF View Citation

    35.  
  35. K. Y. Lim and X. Zhou, "MOSFET Subthreshold Compact Modeling with Effective Gate Overdrive," IEEE Trans. Electron Devices, Vol. 49, No. 1, pp. 196-199, Jan. 2002. Download PDF View Citation

    36.  
  36. X. Zhou and K. Y. Lim, "Unified MOSFET Compact I-V Model Formulation through Physics-Based Effective Transformation," IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887-896, May 2001. Download PDF View Citation

    37.  
  37. X. Zhou, K. Y. Lim, and W. Qian, "Threshold Voltage Definition and Extraction for Deep-Submicron MOSFETs," Solid-State Electron., Vol. 45, No. 3, pp. 507-510, Apr. 2001. Download PDF View Citation

    38.  
  38. K. Y. Lim and X. Zhou, "A Physically-Based Semi-Empirical Effective Mobility Model for MOSFET Compact I-V Modeling," Solid-State Electron., Vol. 45, No. 1, pp. 193-197, Jan. 2001. Download PDF View Citation

    39.  
  39. K. Y. Lim and X. Zhou, "A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V Modeling," IEEE Trans. Electron Devices, Vol. 47, No. 6, pp. 1300-1302, Jun. 2000. Download PDF View Citation

    40.  
  40. X. Zhou, "Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate-Material Engineering," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 113-120, Jan. 2000. Download PDF View Citation

    41.  
  41. X. Zhou, K. Y. Lim, and D. Lim, "A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology Development," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 214-221, Jan. 2000. Download PDF View Citation

    42.  
  42. X. Zhou, K. Y. Lim, and D. Lim, "A New 'Critical-Current at Linear-Threshold' Method for Direct Extraction of Deep-Submicron MOSFET Effective Channel Length," IEEE Trans. Electron Devices, Vol. 46, No. 7, pp. 1492-1494, Jul. 1999. Download PDF View Citation

    43.  
  43. X. Zhou, K. Y. Lim, and D. Lim, "A Simple and Unambiguous Definition of Threshold Voltage and Its Implications in Deep-Submicron MOS Device Modeling," IEEE Trans. Electron Devices, Vol. 46, No. 4, pp. 807-809, Apr. 1999. Download PDF View Citation

    44.  
  44. X. Zhou and W. Long, "A Novel Hetero-Material Gate (HMG) MOSFET for Deep-Submicron ULSI Technology," IEEE Trans. Electron Devices, Vol. 45, No. 12, pp. 2546-2548, Dec. 1998. Download PDF View Citation

    45.  
  45. X. Zhou, T. Tang, L. S. Seah, C. J. Yap, and S. C. Choo, "Numerical Investigation of Subpicosecond Electrical Pulse Generation by Edge Illumination of Silicon Transmission-Line Gaps," IEEE J. Quantum Electron., Vol. 34, No. 1, pp. 171-178, Jan. 1998. Download PDF View Citation

    46.  
  46. X. Zhou, "Numerical Physics of Subpicosecond Electrical Pulse Generation by Nonuniform Gap Illumination," IEEE J. Quantum Electron., Vol. 32, No. 9, pp. 1672-1679, Sep. 1996. Download PDF View Citation

    47.  
  47. X. Zhou, "On the Physics of Femto-second Electrical Pulse Generation by Nonuniform Gap Illumination," OPTOELECTRONICS--Devices and Technologies, Vol. 10, No. 4, pp. 491-504, Dec. 1995.

    48.  
  48. X. Zhou and H. S. Tan, "Monte Carlo Formulation of Field-Dependent Mobility for AlxGa1-xAs," Solid-State Electron., Vol. 38, No. 6, pp. 1264-1266, Jun. 1995. Download PDF View Citation

    49.  
  49. X. Zhou, S. Alexandrou, and T. Y. Hsiang, "Monte Carlo investigation of the intrinsic mechanism of subpicosecond pulse generation by nonuniform gap illumination," J. Appl. Phys., Vol. 77, No. 2, pp. 706-711, Jan. 1995. Download PDF View Citation

    50.  
  50. X. Zhou, "Electron Transport in Graded-Band Devices: Interplay of Field, Composition and Length Dependencies," Solid-State Electron., Vol. 37, No. 11, pp. 1888-1890, Nov. 1994. View Citation

    51.  
  51. X. Zhou and H. S. Tan, "Monte Carlo formulation of velocity-field characteristics and expressions for AlxGa1-xAs," Int. J. Electron., Vol. 76, No. 6, pp. 1049-1062, Jun. 1994.

    52.  
  52. X. Zhou, "Regional Monte Carlo Modeling of Electron Transport and Transit-Time Estimation in Graded-Base HBT's," IEEE Trans. Electron Devices, Vol. 41, No. 4, pp. 484-490, Apr. 1994. Download PDF View Citation

    53.  
  53. X. Zhou and T. Y. Hsiang, "Monte Carlo determination of femtosecond dynamics of hot-carrier relaxation and scattering processes in bulk GaAs," J. Appl. Phys., Vol. 67, No. 12, pp. 7399-7403, Jun. 1990. Download PDF View Citation

    54.  
  54. X. Zhou, T. Y. Hsiang, and R. J. Dwayne Miller, "Monte Carlo study of photogenerated carrier transport in GaAs surface space-charge fields," J. Appl. Phys., Vol. 66, No. 7, pp. 3066-3073, Oct. 1989. Download PDF View Citation