IEEE Transactions on Electron Devices, Vol. 46, No. 4, pp. 807-809, April 1999.

(Manuscript received September 8, 1998; revised November 2, 1998)

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A new definition of MOSFET threshold voltage is proposed, namely, the "critical-current at linear-threshold" method, which has a unique solution and is very simple to measure.  This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling.  The proposed method effectively removes ambiguity of de facto industry standard of the constant-current method for MOS threshold voltage.

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