Solid-State Electronics, Vol. 45, No. 3, pp. 507-510, April 2001.
(Manuscript received February 4, 2000; revised October 17, 2000.)

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The subtle difference in MOSFET threshold voltage between the two popular definitions, maximum-g_m and constant-current, is investigated in the deep-submicron regime.  The result pinpoints to the importance of the lateral-field effect in linear region at very short gate length, and further supports the combined definition known as the "critical-current at linear-threshold" method, which includes short-channel effects while retaining the simplicity and consistency of the constant-current method.

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