MSM2002

Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction

Siau Ben Chiah*, Xing Zhou*, Khee Yong Lim†, Alex See†, and Lap Chan†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532. Fax: (65) 791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002)

San Juan, Puerto Rico, April 22-25, 2002, pp. 750-753.

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Abstract

This paper demonstrates a physically-based approach to parameter extraction of the compact Ids model we have developed for deep-submicron technology development. A two-iteration parameter-extraction scheme is described, which improves the previous one-iteration approach. Parameter calibration for the V_t model is revisited. Comparison of parabolic and linear body-bias dependency with new calibration sequence for the V_t model is carried out, which shows higher accuracy in V_t modeling for the new parabolic interpolation. Optimization for the halo pile-up centriod, LDD lateral diffusion as well as saturation velocity is carried out to improve the overall V_t and I_ds modeling. This has been verified with the experimental data from a 0.18-µm CMOS technology wafer.

References

[1] X. Zhou and K. Y. Lim, IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887–896, May 2001.
[2] S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, Proc. MSM2001, Hilton Head Island, SC, Mar. 2001, pp. 486–489.
[3] X. Zhou, K. Y. Lim, and W. Qian, Solid-State Electron., Vol. 45, No. 3, pp. 507–510, Apr. 2001.
[4] Y. Cheng, et al., BSIM3v3 Manual, Univ. of California, Berkeley, CA, 1997–1998.
[5] K. Y. Lim and X. Zhou, to appear in IEEE Trans. Electron Devices, Vol. 49, No. 1, Jan. 2002.
[6] W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in C, Cambridge Univ. Press, 2nd edition, 1992, Chap. 15, p. 683.

Citation

[5] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 338-341.