MSM2003

Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects

Siau Ben Chiah*, Xing Zhou*, and Khee Yong Lim†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003)

San Francisco, CA, February 23-27, 2003, Vol. 2, pp. 338-341.

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Abstract

This paper describes a scalable threshold voltage model for the entire range of drawn length and width, considering important short-channel, reverse short-channel, narrow-width, and inverse narrow-width effects using a unified effective channel doping. The model has a simple compact form that can used to characterize advanced deep-submicron devices with halo-implanted MOSFET. The model has been verified with the experimental data from 0.18-µm CMOS shallow trench isolation technology wafer.

References

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[3] K. Ohe, S. Odanaka, K. Moriyama, T. Hori, and G. Fuse, IEEE Trans. Electron Devices, vol. 36, pp. 1110–1116, 1989.
[4] S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, Proc. MSM2001, Hilton Head Island, 2001, pp. 486–489.
[5] S. B. Chiah, X. Zhou, K. Y. Lim, A. See, and L. Chan, Proc. MSM2002, San Juan, 2002, pp. 750–753.
[6] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, Proc. ICSICT-2001, Shanghai, 2001, pp. 855–860.
[7] S. B. Chiah, X. Zhou, and K. Y. Lim, to appear in Proc. MSM2003, San Francisco, 2003.

Citation

[6] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 342-345.