MSM2003

Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

Siau Ben Chiah*, Xing Zhou*, and Khee Yong Lim†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003)

San Francisco, CA, February 23-27, 2003, Vol. 2, pp. 342-345.

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Abstract

This paper demonstrates a unified geometry-dependent drain current model for the entire range of drawn length and width without binning, considering all important short- channel/narrow-width effects, including width-dependent vertical-field mobility, bias-dependent source/drain series resistance, velocity saturation/overshoot, as well as the effect of dog-bone geometry for narrow-width MOSFETs with dog-bone layout in all regions of operation. It has been verified with the experimental data from 0.18-µm CMOS shallow trench isolation (STI) technology wafer.

References

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[6] S. B. Chiah, X. Zhou, and K. Y. Lim, to appear in Proc. MSM2003, San Francisco, 2003.
[7] K. Y. Lim and X. Zhou, Microelectronics Rel., vol. 42, pp. 1857–1864, 2002.
[8] K. Y. Lim and X. Zhou, IEEE Trans. Electron Devices, vol. 49, pp. 196–199, 2001; also: S. B. Chiah, X. Zhou, K. Y. Lim, submitted for publication.
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Citation

[11] X. Zhou, S. B. Chiah, and K. Y. Lim, "A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization," (Invited Paper), Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 266-269.
[7] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 338-341.