MSM2003

A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Xing Zhou*, Siau Ben Chiah*, and Khee Yong Lim†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003)

San Francisco, CA, February 23-27, 2003, Vol. 2, pp. 266-269.

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Abstract

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long/wide-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model.

References

[1] Y. Cheng, et al., “BSIM3v3 Manual,” UC Berkeley, 1997.
[2] G. Gildenblat and T.-L. Chen, Proc. MSM2002, pp. 657–661, 2002.
[3] M. Miura-Mattausch, et al., Proc. MSM2002, pp. 678–681, 2002.
[4] http://www.semiconductors.philips.com/Philips_Models/
[5] Y. Tsividis, “Operation and Modeling of the MOS Transistor,” McGraw-Hill, 2nd ed., pp. 179–181, 1999.
[6] X. Zhou and K. Y. Lim, IEEE Trans. Electron Devices, vol. 48, pp. 887–896, 2001.
[7] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, Proc. ICSICT-2001, Shanghai, 2001, pp. 855–860.
[8] X. Zhou, Proc. MSM2002, pp. 710–714, 2002.
[9] K. Y. Lim and X. Zhou, Microelectronics Rel., vol. 42, pp. 1857–1864, 2002.
[10] K. Y. Lim and X. Zhou, IEEE Trans. Electron Devices, vol. 49, pp. 196–199, 2001; also: S. B. Chiah, X. Zhou, K. Y. Lim, submitted for publication.
[11] S. B. Chiah, X. Zhou, and K. Y. Lim, to appear in Proc. MSM2003, San Francisco, 2003.

Citation

[17] S. B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004.
[16] X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," to appear in Solid-State Electron., 2004.
[4] X. Zhou, S. B. Chiah, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs," (Invited Paper), Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 74-79.
[4] S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 175-178.
[17] B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004.