IEEE Electron Device Letters, Vol. 25, No. 5, pp. 311-313, May 2004
(Manuscript received December 8, 2003; revised  February 17, 2004.)

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This paper investigates major sources of asymmetry in a MOSFET compact model by comparing source versus bulk reference in the drain current, effective field, and effective mobility equations.  Contrary to the general belief that a regional threshold-voltage (Vt) based model may pose symmetry problem, we demonstrate that even with the simple source-extrapolated Vt-based model, it can be symmetric if the drain current and the effective transverse field are derived with bulk as the reference, and the lateral-field effective mobility are properly modeled.

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