Source-Drain Symmetry in Unified Regional MOSFET Model

Siau Ben Chiah, Xing Zhou, Senior Member, IEEE, Khee Yong Lim, Member, IEEE, Lap Chan, and Sanford Chu, Member, IEEE

Figures

Fig. 1 | Fig. 2 | Fig. 3

Fig-1

Fig. 1 Derivative of gds versus Vds for the bulk-referenced Vt and Eeff (solid line), compared with bulk-referenced Vt and source-referenced Eeff (dotted line), source-referenced Vt and source-referenced Eeff (dashed line), as well as numerical device data (circle).  The µeff' term in (11), which dominates the gds' behavior, for the three models is also shown (right axis).

Fig-2a

Fig. 2 Derivative of µeff [(8), right axis] and µ0 [(4), or (8) with d0 = 0, left axis] versus Vds for the three models in Fig. 1.  The inset shows the Gummel symmetry plots for the bulk-referenced Vt and Eeff models when (8) (right axis) and (4) (left axis) is used as the effective mobility in (1), respectively.

Fig-3

Fig. 3 Gummel symmetry test [2] (with Vgb0 = 1.2 V and Vb0 = 0.2 V) of the first (right axis) and second (left axis) derivatives of Id versus Vx for the three models in Fig. 1.