MSM2004

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Khee Yong Lim**, Lap Chan**, and Sanford Chu**

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: exzhou@ntu.edu.sg
** Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004)

Boston, MA, March 7-11, 2004, Vol. 2, pp. 74-79.

Copyright Notice

© 2004 Nano Science and Technology Institute. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from Nano Science and Technology Institute.

Abstract

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deep-submicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source-drain symmetry, charge-based AC model fully consistent with DC without the need for C-V data, and inclusion of poly-depletion effect for both DC and AC models.

References

[1] http://www.ntu.edu.sg/home/exzhou/WCM/link.htm#Article
[2] J. E. Meyer, RCA Rev., vol. 32, pp. 42–63, 1971.
[3] M. Chan, et al., Microelectronics Reliability, vol. 43, no. 3, pp. 399–404, 2003.
[4] H. C. Pao and C. T. Sah, Solid-State Electron., vol. 9, pp. 927–937, 1966.
[5] X. Zhou, S. B. Chiah, and K. Y. Lim, Proc. Nanotech 2003, Feb. 2003, vol. 2, pp. 266–269.
[6] T.-L. Chen and G. Gildenblat, Electron. Lett., vol. 37, pp. 791–793, 2001.
[7] Y. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill, 2nd ed., pp. 179–181, 1999.
[8] X. Zhou and K. Y. Lim, IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 887–896, 2001.
[9] A. G. Sabnis and J. T. Clemens, 1979 IEDM Tech. Dig., pp. 18–21.
[10] N. Arora, MOSFET Models for VLSI Circuit Simulation—Theory and Practice, Wien, New York: Springer-Verlag, 1993.
[11] D. E. Ward and R. W. Dutton, IEEE J. Solid-State Circuits, vol. SC-13, p. 703–707, Oct. 1978.
[12] S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, “Threshold-voltage-based regional modeling of MOSFETs with symmetry and continuity,” Proc. Nanotech 2004, Mar. 2004.
[13] N. D. Arora, R. Rios, and C.-L. Huang, IEEE Trans. Electron Devices, vol. 42, no. 5, pp. 935–943, 1995.
[14] R. Rios, N. D. Arora, and C.-L. Huang, IEEE Electron Device Lett., vol. 15, no. 4, pp. 129–131, 1994.

Citation

[10] S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 175-178.