X. Zhou, K.Y. Lim, W. Qian
Fig. 1 Measured linear Ids - Vgs curves (lines) for each device of drawn length Ldrawn as indicated. Critical currents based on the Icrit@Vt0 definition (solid circles) and the CC definition (open circles) are shown for each device. The inset shows the corresponding linear transconductance.
Fig. 2 Measured saturation Ids - Vgs curves (lines) for the same set of devices. Vtsat are interpolated at Vgs at which Ids = Icrit (from Fig. 1 for both methods) for each device. The inset shows the corresponding saturation transconductance.
Fig. 3 Second derivative of the measured linear Ids - Vgs data (lines) for each device, with the corresponding values indicated at the extracted Vt0 for the Icrit@Vt0 definition (solid circles) and the CC definition (open circles)..
Fig. 4 Extracted Vt0 (circles) and Vtsat (triangles) versus Ldrawn for the Icrit@Vt0 definition (solid symbols) and the CC definition (open symbols). The inset shows the same data against Icrit, as shown by the symbols in Figs. 1 and 2.
Fig. 5 Icrit versus Ldrawn for the Icrit@Vt0 definition (solid circles) and the CC definition (open circles) extracted from the linear Ids - Vgs curves (Fig. 1). The inset shows log(Icrit) versus log(Ldrawn).
Fig. 6 The same data from Fig. 5 against Ldrawn
(solid and open circles). The Icrit data of the
CC definition when plotted against Lg (triangles) or
Leff
(squares) assuming DCD = 0.02
mm and DL
= 0.1 mm. The empirical model Id0'
= I0(Vds/Leff)a
fitted to the Icrit@Vt0
data (diamonds). The inset plots Icrit against
Leff
for both methods.