Fig. 1 Measured linear I_ds - V_gs curves (lines) for each device of drawn length L_drawn as indicated.  Critical currents based on the I_crit@V_t0 definition (solid circles) and the CC definition (open circles) are shown for each device.  The inset shows the corresponding linear transconductance.

Fig. 2 Measured saturation I_ds - V_gs curves (lines) for the same set of devices.  V_tsat are interpolated at V_gs at which I_ds = I_crit (from Fig. 1 for both methods) for each device. The inset shows the corresponding saturation transconductance.

Fig. 3 Second derivative of the measured linear I_ds - V_gs data (lines) for each device, with the corresponding values indicated at the extracted V_t0 for the I_crit@V_t0 definition (solid circles) and the CC definition (open circles)..

Fig. 4 Extracted V_t0 (circles) and V_tsat (triangles) versus L_drawn for the I_crit@V_t0 definition (solid symbols) and the CC definition (open symbols).  The inset shows the same data against I_crit, as shown by the symbols in Figs. 1 and 2.

Fig. 5 I_crit versus L_drawn for the I_crit@V_t0 definition (solid circles) and the CC definition (open circles) extracted from the linear I_ds - V_gs curves (Fig. 1).  The inset shows log(I_crit) versus log(L_drawn).

Fig. 6 The same data from Fig. 5 against L_drawn (solid and open circles).  The I_crit data of the CC definition when plotted against L_g (triangles) or L_eff (squares) assuming D_CD = 0.02 mm and DL = 0.1 mm.  The empirical model I_d0' = I₀(V_ds/L_eff)^a fitted to the I_crit@V_t0 data (diamonds).  The inset plots I_crit against L_eff for both methods.