ICSICT01

Technology-Dependent Modeling of Deep-Submicron MOSFET's and ULSI Circuits
(Invited Paper)

Xing Zhou*, Siau Ben Chiah*, Khee Yong Lim†, Yuwen Wang†, Xing Yu†, Sally Chwa†, Alex See†, and Lap Chan†
* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798.
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406
Email: exzhou@ntu.edu.sg

Proc. of the 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Vol. 2, pp. 855-860.
Shanghai, P. R. China, October 22-25, 2001.

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Abstract

This paper presents a summary of a unified compact I_ds model for deep-submicron (DSM) MOSFET's developed from scratch over the past few years. The model covers full range of gate-length (down to the threshold roll-off region) and biases for a given technology, which requires minimum measurement data to extract its 28 fitting parameters following a prioritized two-iteration sequence. The model has been implemented in an automated extraction program (DOUST), which can be used in aiding new technology development, and in predicting process effects on ULSI circuit performance when implemented in the circuit simulator (XSIM).

References

[1] X. Zhou and K. Y. Lim, IEEE Trans. Electron Devices, 48, 887 (2001).
[2] K. Y. Lim and X. Zhou, Proc. of IEEE Inter. Conf. on Semicond. Electron., (Malaysia, 1998), p. 27.
[3] K. Y. Lim, X. Zhou, D. Lim, Y. Zu, H. M. Ho, K. Loiko, C. K. Lau, M. S. Tse, and S. C. Choo, Proc. of IEEE Hong Kong Electron Devices Meeting, (Hong Kong, 1998), p. 114.
[4] X. Zhou, K. Y. Lim, and D. Lim, IEEE Trans. Electron Devices, 47, 214 (2000).
[5] K. Y. Lim, X. Zhou, and Y. Wang, Proc. of 3rd Inter. Conf. on Model. and Simul. of Microsys., (San Diego, California, 2000), p. 317.
[6] S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, Proc. of 4th Inter. Conf. on Model. and Simul. of Microsys., (Hilton Head Island, South Carolina, 2001), p. 486.
[7] X. Zhou and K. Y. Lim, IEEE Trans. Electron Devices, 46, 1492 (1999).
[8] X. Zhou and K. Y. Lim, Proc. of 4th Inter. Conf. on Model. and Simul. of Microsys., (Hilton Head Island, South Carolina, 2001), p. 44.
[9] K. Y. Lim and X. Zhou, Solid-St. Electron., 45, 193 (2001).
[10] K. Y. Lim and X. Zhou, IEEE Trans. Electron Devices, 47, 1300 (2000).
[11] K. Y. Lim and X. Zhou, submitted to IEEE Trans. Electron Devices.
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[13] K. Y. Lim and X. Zhou, submitted to IEEE Trans. Electron Devices.
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[15] X. Zhou and K. Y. Lim, submitted to Solid-St. Electron.
[16] See complete information at the website:

http://www.ntu.edu.sg/home/exzhou/research/DOUST/pub.htm

[17] X. Zhou, K. Y. Lim, and D. Lim, IEEE Trans. Electron Devices, 46, 807 (1999).
[18] X. Zhou, K. Y. Lim, and W. Qian, Solid-St. Electron., 45, 507 (2001).
[19] K. Y. Lim, X. Zhou, and D. Lim, Proc. of 2nd Inter. Conf. on Model. and Simul. of Microsys., (San Juan, Puerto Rico, 1999), p. 423.
[20] X. Zhou and K. Y. Lim, Proc. of 3rd Inter. Conf. on Model. and Simul. of Microsys., (San Diego, California, 2000), p. 333.
[21] See complete information at the website:

http://www.ntu.edu.sg/home/exzhou/research/XSIM/pub.htm

[22] T. Tang and X. Zhou, J. Model. and Simul. of Microsys., 1(2), p. 83 (1999).
[23] T. Tang and X. Zhou, Proc. of 39th Midwest Sym. on Circuits and Systems, (Ames, Iowa, 1996), p. 325.
[24] X. Zhou, Proc. of National Seminar on VLSI: Systems, Design and Technology, (Indian Institute of Technology, Bombay, 2000), p. 10.

Citation

[3] X. Zhou, "Xsim: A compact model for bridging technology developers and circuit designers," (Invited Paper), Proc. 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002, pp. 710-714.
[4] X. Zhou, "Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits," (Invited Paper), Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002), Wroclaw, Poland, June 2002, pp. 39-44.
[7] X. Zhou, S. B. Chiah, and K. Y. Lim, "A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization," (Invited Paper), Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 266-269.
[6] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 338-341.
[5] S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 342-345.