MULTI-LEVEL MODELING OF DEEP-SUBMICRON MOSFETS AND ULSI CIRCUITS
(Invited Paper)

X. Zhou

Nanyang Technological University


Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002)

Wroclaw, Poland, June 20-22, 2002, pp. 39-44.


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Abstract

This paper reviews the trends and needs in multi-level modeling in the context of deep-submicron MOSFETs and ULSI systems.  A dual-representation of transistors/circuit is proposed and demonstrated through physics-based compact modeling and single-engine circuit simulator based on subcircuit expansion.  Extension to process correlation and block-level representation is also proposed, which will be the key to studying process effects on system performance.  This consistent dual-representation allows detailed physics captured at a lower level to be propagated to the higher level of abstraction.


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