Citation and Abstract Page

A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling
- Zhou, X.; Lim, K.Y.; Lim, D.
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

This Paper Appears in :
Electron Devices, IEEE Transactions on

on Pages: 807 - 809

April 1999 Vol. 46 Issue: 4 ISSN: 0018-9383

References Cited: 10
CODEN: IETDAI
Accession Number: 6217440

Abstract:

A new definition of MOSFET threshold voltage is proposed, namely, the "critical-current at linear-threshold" method, which has a unique solution and is very simple to measure. This definition gives consistent values of threshold voltage for different regions of operation at long channel, and contains the information on short-channel effects at short channel, which is very useful for deep-submicron MOS device characterization and modeling. The proposed method effectively removes ambiguity of de facto industry standard of the constant-current method for MOS threshold voltage.

Subject Terms:

MOSFET; threshold voltage; deep-submicron MOS device; modeling; critical-current; linear-threshold; short-channel effects; constant-current method; MOS threshold voltage; MOSFET