General
analytical Poisson solution for undoped generic two-gated
metal-oxide-semiconductor
field-effect transistors
W. Z. Shangguan, T. C. Au Yeung, Z. M. Zhu, and X. Zhou
Applied Physics Letters,
Vol. 90, No. 1, 012110, 1 January 2007
(Manuscript received 7 September 2006; accepted
29 November 2006; published online 3 January 2007.)
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Abstract
We present a general analytical solution to the Poisson equation for
undoped semi-conductors. This general Poisson solution is then applied
to generic dual-gate metal-oxide- semiconductor field-effect transistors
(MOSFETs), unifying different types including silicon-on-insulator, and
symmetric andasymmetric double-gate MOSFETs. Newton-Raphson (NR) algorithm
is called to solve the resultingsurface-potential equation. An exact solution
is proposed making the NR algorithm computationally very efficient. While
the universal initial guess can be used as an approximate solution for
fast evaluation, the iterative results by NR algorithm are useful for benchmark
tests.
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Citation
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