IEEE Electron Device Letters, Vol. 27, No. 1, pp. 62-64, January 2006
(Manuscript received October 17, 2005; accepted  October 24, 2005.)

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The effect of substrate doping on the capacitance–voltage characteristics of a surface-channel strained-silicon p-channel MOSFET has been studied to explain a measured anomalous behavior in which a “plateau” in the accumulation region was observed.  It is found that this plateau is substrate doping dependent and it switches from a plateau on the inversion side to that on the accumulation side as the substrate doping increases.  The physics behind this behavior has been explained by the one-dimensional Poisson solution and validated with numerical simulations and experimental data.

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