Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, December 2002.
(Manuscript received 6 April 2002; received in revised form 29 July 2002.)

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A compact analytical model for MOSFET channel-length modulation (CLM) based on momentum and energy conservation of Boltzmann Transport Equation (BTE) as well as quasi-2D formulation is presented.  It is consistent with the generalized drift-diffusion (DD) formulation including the nonlocal electron temperature, which can be interpreted as being an effective CLM or effective velocity overshoot.  The model has a simple familiar form of the “pinch-off” model, with one fitting parameter for the length- and bias-dependent effective saturation field and effective Early voltage.  The model can be easily characterized with one measured I_ds - V_ds data and has been verified with submicron technology data for the full range of gate lengths and bias conditions.

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