International Journal of Electronics, Vol. 76, No. 6, pp. 1049-1062, June 1994.

(Received 16 November 1993; accepted 6 December 1993)

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Steady-state velocity-field characteristics in Al_xGa_1-xAs are calculated for a wide range of composition, doping, and temperature variations, using Monte Carlo techniques. The results are related to the scattering mechanisms which are responsible for the observed transport parameters. A single empirical expression is formulated to fit all the Monte Carlo data. This expression incorporates all the nonlinear transport effects and would be useful for numerical simulation of device models. A general methodology is also presented for formulating such expressions, and the results are applicable to modelling field-dependent mobility in Al_xGa_1-xAs devices.

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