Monte Carlo formulation of velocity-field characteristics and expressions AlxGa1-xAs

X. ZHOU and H. S. TAN

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4 | Fig. 5 | Fig. 6 | Fig. 7 | Fig. 8

Fig-1

Fig. 1 Velocity-field characteristics in AlxGa1-xAs from Monte Carlo (symbols) and empirical expression (solid lines) with (a) composition dependence, (b) doping dependence, and (c) temperature dependence.

Fig-2

Fig. 2 Valley population vs field in (a) G, (b) L, and (c) X valley, with composition dependence (N = 1017 cm-3, T = 300 K).

Fig-3

Fig. 3 Average scattering rate vs field due to (a) intervalley, (b) intravalley, (c) ionized impurity, (d) optical phonon, and (e) acoustic phonon scatterings, with composition dependence (N = 1017 cm-3, T = 300 K).

Fig-4

Fig. 4 Average scattering angle vs field due to (a) ionized impurity, (b) optical phonon, and (c) acoustic phonon scatterings, with composition dependence (N = 1017 cm-3, T = 300 K).

Fig-5

Fig. 5 Ionized impurity scattering angle vs field at different doping concentrations.

Fig-6

Fig. 6 Optical phonon scattering angle vs field at different temperatures.

Fig-7

Fig. 7 Calculated velocity–field characteristics using equation (5) with (a) (6) for composition dependence, (b) (7) for doping dependence, and (c) (8) for temperature dependence; and compared with MC results (symbols).

Fig-8

Fig. 8 Calculated field-dependent mobility using the formulated expressions (2), (5)–(8), with (a) composition dependence, (b) doping dependence, and (c) temperature dependence.