IEEE Transactions on Electron Devices, Vol. 47, No. 6, June 2000, pp. 1300-1302.

(Manuscript received August 26, 1999; revised January 31, 2000.)

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A physically-based series resistance model for deep-submicron MOSFET is presented, which includes a bias-dependent (intrinsic) component and a bias-independent (extrinsic) component.  The model is semi-empirical and consists of two physics-based fitting parameters to be extracted with a single measurement, which can be extended to all gate-length and bias conditions.  The model can be applied to drain-current prediction and optimization due to process fluctuations such as LDD junction depth and spacer thickness.

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