Proc. of the 1999 International Semiconductor Device Research Symposium (ISDRS-99)

Charlottesville, VA, December 1-3, 1999.

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A compact model for MOSFET channel-length modulation based on velocity overshoot is presented, which has a simple familiar form with one fitting parameter embedded in the length- and bias-dependent effective Early voltage.  The model physically describes the internal field distributions in the velocity-saturation region and interprets them in terms of the effective potential drop and average velocity in the intrinsic channel, and yet, it is easy to characterize from measured terminal current.

• [1] Y. P. Tsividis, Operation and Modeling of the MOS Transistor, 1987, p. 172.
• [2] S. Wolf, Silicon Processing for the VLSI Era, vol. 3, 1995, p. 262.
• [3] P. K. Ko, VLSI Electronics: Microstructure Science, vol. 18, 1988, p. 25.
• [4] X. Zhou, K. Y. Lim, and D. Lim, “A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development,” to appear in IEEE Trans. Electron Devices.
• [5] K. Y. Lim, X. Zhou, and D. Lim, “A predictive length-dependent saturation current model based on accurate threshold voltage modeling,” Proc. 2nd Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (MSM99), Puerto Rico, Apr. 1999, pp. 423–426.
• [6] K. Y. Lim and X. Zhou, “A physically-based semi-empirical effective mobility model for MOSFET compact I-V modeling,” submitted to IEEE Trans. Electron Devices.
• [7] BSIM3v3 Manual, UC Berkeley, CA, 1996, p. 3-13.
• [8] K. Y. Lim and X. Zhou, “A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling,” submitted to IEEE Electron Device Lett.
• [9] P. F. Bagwell, D. A. Antoniadis, and T. P. Orlando, VLSI Electronics: Microstructure Science, vol. 18, 1988, p. 346.
• [10] F. Assaderaghi, D. Sinitsky, J. Bokor, P. K. Ko, H. Gaw, and C. Hu, “High-field transport of inversion-layer electrons and holes including velocity overshoot,” IEEE Trans. Electron Devices, vol. 44, pp. 664–671, 1997.

1. [3] X. Zhou and K. Y. Lim, "A novel approach to compact I-V modeling for deep-submicron MOSFET's technology development with process correlation," Proc. 3rd International Conference on Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, Mar. 2000, pp. 333-336.
2. [16] K. Y. Lim and X. Zhou, "A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling," IEEE Trans. Electron Devices, Vol. 47, No. 6, pp. 1300-1302, June 2000.
3. [12] X. Zhou and K. Y. Lim, "Unified MOSFET compact I-V model formulation through physics-based effective transformation," IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887-896, May 2001.
4. [12] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.
5. [4] X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," Proc. 2001 International Semiconductor Device Research Symposium (ISDRS-01), Washington DC, Dec. 2001, pp. 653-656.
6. [10] K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002.
7. [13] X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," to appear in Solid-State Electron., 2004.