ISDRS-01

A Compact Deep-Submicron MOSFET g_ds Model Including Hot-Electron and Thermoelectric Effects

Xing Zhou*, Siau Ben Chiah*, and Khee Yong Lim†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532. Fax: (65) 791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 2001 International Semiconductor Device Research Symposium (ISDRS-01)

Washington DC, December 5-7, 2001, pp. 653-656.

Copyright Notice

© Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from copyright owner.

Abstract

A compact I_ds model with physical gds modeling for deep-submicron MOSFETs is formulated based on first-principle momentum/energy balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with one (or two) fitting parameter(s) and one-step extraction. The model has been verified with 0.18-µm experimental data with good g_ds prediction.

References

[1] X. Zhou and K. Y. Lim, “Unified MOSFET compact I-V model formulation through physics-based effective transformation,” IEEE Trans. Electron Devices, vol. 48, pp. 887–896, May 2001.
[2] P. K. Ko, VLSI Electronics: Microstructure Science, vol. 18, 1988.
[3] S. Wolf, Silicon Processing for the VLSI Era, vol. 3, 1995.
[4] X. Zhou and K. Y. Lim, “A compact MOSFET Ids model for channel-length modulation including velocity overshoot,” Proc. ISDRS-99, Dec. 1999, pp. 423–426.
[5] M. Lundstrom, Fundamentals of Carrier Transport, New York: Addison-Wesley, 1990, vol. X.
[6] P. A. Blakey, “The generalized drift-diffusion model,” Proc. ISDRS-99, Dec. 1999, pp. 409–412.
[7] Y. Cheng, et al., BSIM3v3 Manual, UC Berkeley, CA, 1997–1998.
[8] J. H. Huang, Z. H. Liu, M. C. Jeng, P. K. Ko, and C. Hu, “A physical model for MOSFET output resistance,” Proc. IEDM, 1992, pp. 569–572.

Citation

[11] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.

[6] X. Zhou, "Xsim: A compact model for bridging technology developers and circuit designers," (Invited Paper), Proc. 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002, pp. 710-714.
[17] K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002.
[12] X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," to appear in Solid-State Electron., 2004.