| DOC TYPE |
VIEW ISSUE
TOC |
VIEW FULL
PAGE |
VIEW CITATION |
| PER |
 |
 |
A
physically-based semi-empirical series resistance model for deep-submicron
MOSFET I-V modeling
Lim, K.Y.; Zhou, X.
Electron Devices, IEEE Transactions on
Volume: 47 6 , June 2000 , Page(s): 1300 -1302 |
| PER |
|
|
A
general approach to compact threshold voltage formulation based on 2D numerical
simulation and experimental correlation for deep-submicron ULSI technology
development
[CMOS]
Xing Zhou; Khee Yong
Lim; Lim, D.
Electron Devices, IEEE Transactions on
Volume: 47 1 , Jan. 2000 , Page(s): 214 - 221 |
| PER |
|
|
Exploring
the novel characteristics of hetero-material gate field-effect transistors
(HMGFETs) with gate-material engineering
Xing Zhou
Electron Devices, IEEE Transactions on
Volume: 47 1 , Jan. 2000 , Page(s): 113 -120 |
| PER |
|
|
Numerical
physics of subpicosecond electrical pulse generation by nonuniform gap
illumination
Xing Zhou
Quantum Electronics, IEEE Journal of
Volume: 32 9 , Sept. 1996 , Page(s): 1672 -1679 |
| PER |
|
|
Numerical
investigation of subpicosecond electrical pulse generation by edge illumination
of silicon transmission-line gaps
Xing Zhou; Tianwen Tang; Lee Seng
Seah; Chong Jin Yap; Seok Cheow Choo
Quantum Electronics, IEEE Journal of
Volume: 34 1 , Jan. 1998 , Page(s): 171 -178 |
| PER |
|
|
Regional
Monte Carlo modeling of electron transport and transit-time estimation
in graded-base HBT's
Xing Zhou
Electron Devices, IEEE Transactions on
Volume: 41 4 , April 1994 , Page(s): 484 -490 |
| PER |
|
|
A
new "critical-current at linear-threshold" method for direct extraction
of deep-submicron MOSFET effective channel length
Zhou, X.; Lim, K.Y.; Lim, D.
Electron Devices, IEEE Transactions on
Volume: 46 7 , July 1999 , Page(s): 1492 -1494 |
| PER |
|
|
A
novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology
Xing Zhou; Wei Long
Electron Devices, IEEE Transactions on
Volume: 45 12 , Dec. 1998 , Page(s): 2546 -2548 |
| PER |
|
|
A
simple and unambiguous definition of threshold voltage and its implications
in deep-submicron MOS device modeling
Zhou, X.; Lim, K.Y.; Lim, D.
Electron Devices, IEEE Transactions on
Volume: 46 4 , April 1999 , Page(s): 807 -809 |
