A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling
- Lim, K.Y.; Zhou, X.
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore


This Paper Appears in :
Electron Devices, IEEE Transactions on

on Pages: 1300 - 1302
 
June 2000 Vol. 47 Issue: 6 ISSN: 0018-9383


Abstract:
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Keywords:
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