on Pages: 214 - 221
 

Jan. 2000

Vol. 47

Issue: 1

ISSN: 0018-9383

References Cited: 12
CODEN: IETDAI
Accession Number: 6472173

A unified compact threshold voltage model is developed, which accounts for the normal and reverse short-channel effects with full range of body- and drain-bias conditions, and has been verified with experimental data down to 0.18 /spl mu/m. The model only has five process-dependent fitting parameters with a simple one-iteration extraction procedure, and can be correlated to process variables for aiding new deep-submicron technology development. The approach to the model formulation is original and general, and can be extended to other key device performance parameters.

circuit simulation; threshold voltage formulation; 2D numerical simulation; deep-submicron ULSI technology; short-channel effects; body-bias conditions; drain-bias conditions; process-dependent fitting parameters; one-iteration extraction procedure; process variables; model formulation; 0.18 micron