on Pages: 2546 - 2548
 

Dec. 1998

Vol. 45

Issue: 12

ISSN: 0018-9383

References Cited: 7
CODEN: IETDAI
Accession Number: 6107622

A novel hetero-material gate MOSFET intended for integration into the existing deep-submicron silicon technology is proposed and simulated. It is shown that by adding a layer of material with a larger workfunction to the source side of the gate, short-channel effects can be greatly suppressed without degrading the driving ability. The threshold voltage roll-off can be compensated and tuned by controlling the length of this second gate. The new structure has great potential in breaking the barrier of deep-suhmicron MOSFET's scaling beyond 0.1 /spl mu/m technologies.

MOSFET; hetero-material gate MOSFET; deep-submicron ULSI technology; Si technology; work function; short-channel effects suppression; threshold voltage roll-off compensation; MOSFET scaling; HMG-MOSFET; 0.1 micron; Si