Citation and Abstract Page

A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length
- Zhou, X.; Lim, K.Y.; Lim, D.
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

This Paper Appears in :
Electron Devices, IEEE Transactions on

on Pages: 1492 - 1494

July 1999 Vol. 46 Issue: 7 ISSN: 0018-9383

References Cited: 12
CODEN: IETDAI
Accession Number: 6310782

Abstract:

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the "critical-current at linear-threshold" ("I/sub crit/@V/sub t0/") based on the maximum-g/sub m/ definition. With a simple calibration of the channel sheet resistance from the long-channel I/sub crit/ data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of I/sub crit/@V/sub t0/. Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling.

Subject Terms:

MOSFET; critical-current at linear-threshold; deep-submicron MOSFET; MOSFET effective channel length; maximum-g/sub m/ definition; calibration; channel sheet resistance; short-channel device