on Pages: 113 - 120
 

Jan. 2000

Vol. 47

Issue: 1

ISSN: 0018-9383

References Cited: 18
CODEN: IETDAI
Accession Number: 6472164

The novel characteristics of a new type of MOSFET, the hetero-material gate field-effect transistor (HMGFET), are explored theoretically and compared with those of the compatible MOSFET. Two conceptual processes for realizing the HMG structure are proposed for integration into the existing silicon technology. The two-dimensional (2-D) numerical simulations reveal that the HMGFET demonstrates extended threshold voltage roll-off to much smaller length and shows simultaneous transconductance enhancement and suppression of short-channel effects (SCEs) [drain-induced barrier-lowering (DIBL) and channel-length modulation (CLM)] and, more importantly, these unique features could be controlled by engineering the material and length of the gate. This work demonstrates a new way of engineering ultrasmall transistors and provides the incentive and guide for experimental exploration.

MOSFET; hetero-material gate field-effect transistors; gate-material engineering; MOSFET; 2D numerical simulations; extended threshold voltage roll-off; transconductance enhancement; short-channel effects; drain-induced barrier-lowering; channel-length modulation; ultrasmall transistors; Si