HKEDM98

A Predictive Semi-Analytical Threshold Voltage Model for Deep-Submicron MOSFET's

K. Y. Lim^*, X. Zhou^*^‡, D. Lim^†, Y. Zu^†, H. M. Ho^†, K. Loiko^†, C. K. Lau^†, M. S. Tse^*, and S. C. Choo^*

^*School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
(^‡Phone: 65-7991368, Fax: 65-7912687, Email: exzhou@ntu.edu.sg)

^†Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

1998 IEEE Hong Kong Electron Devices Meeting (HKEDM98)

Hong Kong, August 29, 1998, pp. 114-117.

Copyright Notice

© 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract

A compact threshold voltage model is developed for the prediction of deep-submicron MOSFET’s scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.

References

[1] Y. P. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill, 1987, p. 186.
[2] Z.-H. Liu, C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng, “Threshold Voltage Model for Deep-Submicrometer MOSFET’s,” IEEE Trans. Electron Devices, vol. 40, no. 1, pp. 86–94, 1993.

Citation

[6] K. Y. Lim and X. Zhou, "Modelling of threshold voltage with non-uniform substrate doping," Proc. 1998 IEEE International Conference on Semiconductor Electronics (ICSE’98), Malaysia, Nov. 1998, pp. 27-31.
[2] K. Y. Lim, X. Zhou, and D. Lim, "A predictive length-dependent saturation current model based on accurate threshold voltage modeling," Proc. 2nd International Conference on Modeling and Simulation of Microsystems (MSM99), San Juan, Puerto Rico, Apr. 1999, pp. 423-426.
[3] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.

IEL Citation