Citation and Abstract Page

A predictive semi-analytical threshold voltage model for deep-submicron MOSFET's
- Lim, K.Y.; Zhou, X.; Lim, D.; Zu, Y.; Ho, H.M.; Loiko, K.; Lau, C.K.; Tse, M.S.; Choo, S.C.
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

This Paper Appears in :
Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong

on Pages: 114 - 117

This Conference was Held : 29 Aug. 1998

1998 ISBN: 0-7803-4932-6

IEEE Catalog Number: 98TH8368
Total Pages: vii+164
References Cited: 2
Accession Number: 6209579

Abstract:

A compact threshold voltage model is developed for the prediction of deep-submicron MOSFETs scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data. The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.

Subject Terms:

MOSFET; semi-analytical model; deep-submicron MOSFET; threshold voltage; 2D device simulation; scaling characteristics