Proc. of the 1998 IEEE International Conference on Semiconductor Electronics (ICSE’98)

Malaysia, November 24-26, 1998, pp. 27-31.

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A simple analytical threshold voltage equation for modelling non-uniform channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of non-uniform doping profiles with a simple, empirical parameter extraction.

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