A Predictive Semi-Analytical Threshold Voltage Model for Deep-Submicron MOSFET's

K. Y. Lim*, X. Zhou*‡, D. Lim†, Y. Zu†, H. M. Ho†, K. Loiko†, C. K. Lau†, M. S. Tse*, and S. C. Choo*

*School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
(‡Phone: 65-7991368, Fax: 65-7912687, Email: exzhou@ntu.edu.sg)

†Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4

Fig-1a (a)
Fig-1b (b)
Fig-1c (c)
Fig-1d (d)
Fig-1e (e)

Fig. 1 The compact threshold voltage model for a given nominal set of parameters (dotted lines) and the effect of parameter variation for different values of Nsub, Npile, l, a, and b, as indicated in the legends.

Fig-2

Fig. 2 The threshold voltage model (line) fitted to the experimental data (symbols) with extracted fitting parameters Nsub = 5.2x1017 cm-3, l = 1, a = 0.002 µm/V1/2, and b = 0.012 µm/V1/2.

Fig-3

Fig. 3 The threshold voltage model (lines) compared to another two sets of experimental data (symbols) based on the extracted values of Nsub = 2.75x1017 cm-3 and 6.7x1017 cm-3 using the fixed parameter set (l, a, and b) from Fig. 1.

Fig-4

Fig. 4 The threshold voltage model (line) with only the implant dose of 1x1012 cm-2 as the input parameter and compared to the experimental data (symbols).