Multi-Level Digital/Mixed-Signal Simulation with Automatic Circuit Partition and Dynamic Delay Calculation

Tianwen Tang* and Xing Zhou

*Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
†School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798


Journal of Modeling and Simulation of Microsystems (JMSM), Vol. 1, No. 2, pp. 83-90, 1999.

(Manuscript received in Cambridge, MA, USA, 14th May 1999)


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Abstract

A unified and consistent representation of logic gates at logic and circuit levels is described based on the subcircuit expansion approach.  A dynamic-delay model is proposed for gate-level timing simulation, which includes the effects of nonlinear capacitive loading, input transition time, and multiple-input triggering on the delay.  It is shown that the approach provides near circuit-level accuracy with gate-level speed and is useful for accurate timing simulation of digital and mixed-signal VLSI circuits.


References



Citation

  1. [10] X. Zhou and K. Y. Lim, "A novel approach to compact I-V modeling for deep-submicron MOSFET's technology development with process correlation," Proc. 3rd International Conference on Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, Mar. 2000, pp. 333-336.
  2. [3] X. Zhou, "Mixed-signal multi-level circuit simulation: An implicit mixed-mode solution," (Invited Paper), Proc. National Seminar on VLSI: Systems, Design and Technology (VSDT2000), Indian Institute of Technology, Bombay, India, Dec. 2000, pp. 10-15.
  3. [26] X. Zhou and K. Y. Lim, "Unified MOSFET compact I-V model formulation through physics-based effective transformation," IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887-896, May 2001.
  4. [22] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.
  5. [6] X. Zhou, "Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits," (Invited Paper), Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002), Wroclaw, Poland, June 2002, pp. 39-44.