Intellectual property
46. “Resistive Switching Memory Device With An Ion Obstruction Barrier Layer And Fabrication Method Thereof”,
DU Yuanmin; Wen Siang Lew; LAI Weng Hong
Singapore Patent Application No. 10202260203T (2022)
45. “Thin Film Multi-Layered Resistive Switching Memory Elements And Methods Of Fabricating The Same”,
DU Yuanmin; Wen Siang Lew; Putu Andhita DANANJAYA
Singapore Patent Application No. 10202251306M (2022)
44. “Maskless Laser Lithography System”,
Gerard Joseph Lim, Calvin Ang, and Wen Siang Lew
Technology Disclosure, NTU TD ref 2022-089 (2022)
43. “Non-Volatile Memory And Methods Of Fabricating The Same”,
Du Yuanmin, Wen Siang Lew, Putu Andhita Danajaya, Hoo Siew Wei and Lai Weng Hong
Singapore Patent Application No. 10202106132V (2021); PCT Patent Application (2021-239-02-PCT).
42. “Non-Volatile Memory Containing Oxygen Scavenger Regions And Methods Of Making The Same”,
Du Yuanmin, Wen Siang Lew; Putu Andhita Danajaya, and Hoo Siew Wei
Singapore Patent Application No. 10202110532Y (2021); PCT Patent Application (2021-392-02-PCT)
41. “Compact Cryostat For Magneto-Optical Imaging”,
Weiliang Gan, and Hoo Siew Wei, and Wen Siang Lew
Technology Disclosure, NTU TD ref 2021-119 (2021)
40. “Apparatus For Generating Magnetic Field, Imaging Device Having The Same, And Method For Imaging A Sample”,
Weiliang Gan, and Wen Siang Lew
Singapore Patent Application No. 10201900137V (2021)
39. “Magnetic Logic Device, Circuit Having Magnetic Logic Devices, And Methods For Controlling The Magnetic Logic Device And The Circuit”,
Gerard Joseph Lim, Chandrasekhar Murapaka, and Wen Siang Lew
PCT Patent Application No. PCT/SG2020/050626 (2021)
38. “Spin-Orbit Torque Driven Logic”,
Gerard Joseph Lim, Chandrasekhar Murapaka, and Wen Siang Lew
Technology Disclosure, NTU TD ref 2018-197 (2018),
37. “A High-Temperature Ferromagnetic Resonance Spectrometer”,
Gerard Joseph Lim, and Wen Siang Lew
Technology Disclosure, NTU TD ref 2018-232 (2018).
36. “Real-time 3D drift correction for Kerr Imaging”,
Weiliang Gan, and Wen Siang Lew
Technology Disclosure, NTU TD ref 2018-189 (2018).
35. “Memory Device, Method For Controlling Multi-Level Alkaline Earth Metal Oxide-Based Resistive Switching States And Of The Same”,
Wen Siang Lew
Technology Disclosure, NTU TD ref 2018-132 (2018)
34. “Integrated Circuits With Magnetic Tunnel Junctions and Methods of Producing The Same”,
Wai Cheung Law, Taiebeh Tahmasebi, Chim Seng Seet, Alex See, Gerard Joseph Lim,Wen Siang Lew
US Patent Application, GF Ref. No.: JSG053
33. “Electromagnet design for Kerr Imaging”,
Weiliang Gan, and Wen Siang Lew
Technology Disclosure, NTU ref TD/263/17 (2017),
Singapore provisional patent application no (Non-Drafted Singapore Patent Application): 10201800208W, NTU reference: PAT/263/17/18/SG PRV
32. “Laser illumination system”,
Weiliang Gan, and Wen Siang Lew
Technology Disclosure, NTU ref TD/264/17 (2017),
31. “Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers”,
Desmond Jia Jun Loy, Danny Shum, Wen Siang Lew
US Patent Applicaiton, GF Ref.: JSG026
30. “Memory Device, Method Of Forming The Same, Method For Controlling The Same And Memory Array”,
Putu Andhita Dananjaya, and Wen Siang Lew
PCT Application No: PCT/SG2017/050457
29. “A continuous-flow size and affinity-based microfluidics cell sorter”,
H.W. Hou, L. Ning and W.S. Lew
Technology Disclosure, NTU ref TD/189/17.
28. “Memory device including a domain wall and ferromagnetic driver nanowire”,
W.S. Lew, I. Purnama and M. Chandra Sekhar
Granted US Patent No. 9,502,090, Nov. 22, 2016.
27. “A Ferromagnetic Resonance Spectrometer"
W.S. Lew, and G.J. Lim
Technology Disclosure, NTU ref TD/326/16,
26. “Magnetic memory devices and methods of operating the same"
W.S. Lew, S.F. Zhang, W.L. Gan, and G.J. Lim
PCT Application No: PCT/SG2016/050526,
25. “Anti-Serially connected resistive random access memory cell"
Putu Andhita Dananjaya, and Wen Siang Lew
Singapore Provisional Patent
PAT/172/16/16/SG PRV,
24. “An apparatus and method for Kerr imaging”,
Weiliang Gan, and Wen Siang Lew
Singapore Provisional Patent
10201603665S
(2016), PCT Application No : PCT/SG2017/050237
23. “Magnetic random number generator”,
Pankaj Sethi, M. Chandra Sekhar, and W.S. Lew
Singapore Provisional Patent
PAT/285/15/16/SG PRV
(2016).
Singapore Patent Application No. 10201600538P, US Patent Application Publication No: US2017/0212728A1
22. “Low-power bit writing in perpendicular magnetic anisotropy memory devices”,
W.S. Lew, S.F. Zhang, W.L. Gan, and G.J. Lim
Singapore Provisional Patent, 10201508828X (2015)
21. “Non-uniform spatial current distribution for logic operations in perpendicular magnetic tunnel junction”,
H.K. Teoh, S. Goolaup, C. Engel, and W.S. Lew
Technology Disclosure, NTU ref TD/044/15 (2015), SG provisional patent.
20. “Programmable logic operation via domain wall profile manipulation”,
S. Goolaup, H.K. Teoh, M. Chandra Sekhar, I. Purnama, R. Maddu, and W.S. Lew
US Provisional Patent, 62/101,491 (2015).
19. “A magnetron thin film sputter deposition system”,
W.S. Lew and G. J. Lim
Technology Disclosure, NTU ref TD/203/14 (2014).
18. “A resistively-heated thin film evaporation deposition system”,
W.S. Lew and G. J. Lim
Technology Disclosure, NTU ref TD/204/14 (2014).
17. “An electron beam-heated thin film evaporation deposition systemn”,
W.S. Lew and G. J. Lim
Technology Disclosure, NTU ref TD/202/14 (2014).
16.
“Magnetic domain wall digital fan-out with perpendicular magnetic anisotropy”,
P. Sethi, S. Goolaup, , M. Chandra Sekhar and and W.S. Lew
Technology Disclosure, NTU ref TD/213/14.
15. “Non-volatile logic device”,
W.S. Lew, M. Chandra Sekhar, I. Purnama, S. Goolaup, P. Sethi, and C. Guite
Patent Cooperation Treaty (PCT) Application No: PCT/SG2014/000218. Granted US Patent No. 9,431,599, Aug 30, 2016.
14. “A memory device”,
W.S. Lew, I. Purnama and M. Chandra Sekhar
Patent Cooperation Treaty (PCT) Application No: PCT/SG2014/000002.
US Patent No. 9,502,090
13. “Deterministic generation of domain wall in zero external magnetic field”,
Chinkhanlun Guite, I.S. Kerk, M. Chandra Sekhar, and W.S. Lew
Singapore Provisional Application No: 10201405402X.
12. “Fabrication Of magnetic nanoparticles by electrodeposition and differential chemical etching techniques”,
W.L. Gan, M. Chandra Sekhar, D.W. Wong, and W.S. Lew
Technology Disclosure, NTU ref TD/083/14 (2013).
11. “Non-volatile memory architecture based on domain wall remote driving sandwiched perpendicular magnetic anisotropy nanowires”,
W.S. Lew, I. Purnama, I.S. Kerk, and G.J. Lim
Technology Disclosure, NTU ref TD/268/13 (2013).
10. “Switching magnetization direction by optical method”,
Chinkhanlun Guite, W.S. Lew,
Technology Disclosure, NTU ref TD/129/13 (2013).
9. “Reconfigurable magnetic logic”,
W.S. Lew, M. Chandra Sekhar, and I. Purnama,
US Provisional Patent, 61/824,738 (2013).
8. “Coupled domain wall oscillator as microwave generator”,
W.S. Lew, M. Chandra Sekhar, and I. Purnama
US Provisional Patent 61/845,097 (2013).
7. “Logic operation based on magnetic domain wall profile”,
W.S. Lew, M. Chandra Sekhar, and I. Purnama
US Provisional Patent 61/748,337 (2012).
6. “Non-volatile memory architecture based on domain wall remote driving”,
W.S. Lew, I. Purnama, and M. Chandra Sekhar
US Provisional Patent 61/748,316 (2012).
5. “Current-induced NOT gate operation based on the chirality flipping of domain wall”,
W.S. Lew, M. Chandra Sekhar, and I. Purnama
Technology Disclosure,NTU ref TD/096/12 (2012).
4. “Metastatic cancer cells removal dialyzer”,
H. Y. Li, W.S. Lew, N.S. Tan and H. F. Liew
US Provisional Patent,61/555,728 (2011)
3. “Controllable disc-shaped magnetic nanoparticles”,
W. S. Lew and H. F. Liew,
Technology Disclosure NTU ref: TD/034/11 (2011)
2. “Method of fabrication for the storage medium of a vertical magnetic domain wall memory device”,
H. F. Liew and W. S. Lew,
Technology DisclosureETPL Ref: SRC/Z/06294 (2010)
1. “Integrated pocket-sized lab-on-chip magnetic resonance spectroscopy/imaging”,
W.K. Peng and W.S. Lew,
US Provisional Patent, 61/187784 (2009)