| Overview |
Compact
Models (CMs) for circuit simulation have been at the heart of CAD tools
for circuit design over the past decades, and are playing an ever increasingly
important role in the nanometer system-on-chip (SOC) era. Although
not highly "visible" to circuit designers and technology developers, a
compact model plays the key role in accuracy and efficiency of the circuit
simulator being used by designers as well as a bridge to the technology
in which the design is to be fabricated. Like the role CM is played
in circuit simulation, CM developers play the similar role in bridging
the circuit designers and technology developers. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge. This demands that CM developers work more closely
with the technology people and the design community. |
|
| Objective |
Workshop
on Compact Modeling (WCM) is one of the first of its kind in bringing
people in the CM field together. The objective of WCM is to
create a truly open forum for discussion among experts in the field as
well as feedback from technology developers, circuit designers, and CAD
tool vendors. The creation of WCM is a natural response of the CM
community to the increasing demand in the field, and it will position itself
as a premier forum for CM developers in information exchange and promotion
of modeling diversity. Ultimately, the result of such a forum will
benefit not only the model developers, but also as a service to the entire
technology, modeling, and design communities. |
|
| Scope |
The scope of WCM covers compact
models for circuit simulation, which is centered at the mainstream MOS
intrinsic models and extended to SOI, multigate, nanowire, bipolar, RF,
noise, interconnect, extrinsic, statistical, numerical-based, and reliability
models, as well as parameter extraction and model-interface standardization.
The key application is for circuit simulation and, hence, numerical simulation
and pure theoretical and experimental work will not be within the scope
of WCM. |
|
| Topics |
The topics for WCM are largely
categorized into the following areas:
-
Bulk MOSFET
-
SOI MOSFET (partial-/full-depletion)
-
Multiple-Gate FET (DG/TG/GAA)
-
High-Voltage/LDMOS
-
Thin-Film Transistor (TFT)
-
Schottky-Barrier/Tunneling/Junctionless FET (SB-FET/JLFET/TFET)
-
Bipolar/Junction (BJT/HBT/SiGe/JFET)
-
HEMT (GaN/InGaP/InGaAs)
-
Non-quasi-static
-
RF
-
Extrinsic/Interconnect Models
-
Parasitic elements
-
Passive device
-
Diode
-
Resistor
-
ESD
-
Interconnect
-
Ballistic device
-
Carbon-Nanotube/Graphene FET (CNFET/GFET)
-
Organic FET
-
Statistical Variability/Reliability/Noise Models
-
Statistical variability
-
Reliability/hot carrier
-
Mismatch
-
Noise
-
Multi-Level Models
-
Subcircuit model
-
Gate/block model
-
Behavioral model
-
Numerical/TCAD/table-based
-
Model Extraction and Interface
-
Parameter extraction and optimization
-
Model-simulator interface
-
Model standardization
-
Model development platform
-
Verilog-A
|
|
| History |
Workshop on Compact Modeling
has been associated with the International Conference on Modeling and
Simulation of Microsystems (MSM) and Nanotech Conference and Tradeshow
(Nanotech) since 2002. Before the initiation of the first WCM at
MSM-2002,
special sessions on Compact Modeling had been organized at MSM-2000
in San Diego and MSM-2001
in Hilton Head Island.
"The Nanotech conference has evolved
along with the rapid changing fields of small technology over the last
seven years. The event originated through the creation of the International
Conference on Modeling and Simulation of Microsystems. This event
provided a multidisciplinary forum designed to integrate distinct disciplines
through a computational commonality. Building upon this computational
strength, the Workshop on Compact Modeling was created to provide a specific
forum for the microelectronic design community. A natural blending
between microsystems, fluidics, mechanics and electronics continued to
occurred at the design level. The following years saw a dramatic
climb in atomistic and molecular scale participation, blending with the
established microsystem community at the event leading to the creation
of the International Conference on Computational Nanoscience. These
three events were combined in 2001-2002 as the necessity for interdisciplinary
cooperation between nano, bio and micro communities became more evident
and accepted."
-- Quoted from Message
from the Program Committee
Technical Program Co-chairs, Nanotech
2003
|
|
|
History of Nanotech -
10 years of growth... click here
|
|
|
Since the 7th Workshop in 2008,
WCM has been running "on its own" as an established forum under NSTI Nanotech,
with fully contributed papers. It has served its historical role
and continues to be an open forum for the compact modeling community.
After the 11th WCM in 2012, it becomes a biennial event under NSTI Nanotech
conference. |
|
| Milestones |
|
|
| 1st
WCM |
WCM
2002, April 23-25, 2002, San Juan, Puerto Rico, USA |
|
| 1st
panel |
WCM2002 Panel
discussion on Trends and Needs in Compact Models in the SOC Era |
|
| 1st
forum |
WCM2003 Forum
on Model development - industry requirement dialogue |
|
| 1st
poster |
WCM2003 contributed
Poster
session with oral briefing |
|
| 1st
keynote |
WCM2005 keynote
by C.-T. Sah: A
History of MOS Transistor Compact Modeling |
|
| 1st
joint paper |
WCM2005 joint-authored
paper by J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat,
C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios, and C.-T. Sah: Advanced
Compact Models for MOSFETs, edited by J. Watts, presented by C.
McAndrew |
|
| 1st
archive |
WCM
2003~2005 proceedings |
|
| 1st
batch NSTI fellow |
X. Zhou, 2006
NSTI Fellow award receipient |
|
|
1st
late news
|
WCM2007 Late
News by C.-T. Sah: Double-Gate
Thin-Base MOS Transistor: The Correct Theory |
|
| 1st
special |
Nanotech SpecialOverview
by A. N. Saxena: Monolithic
Concept and the Inventions of Integrated Circuits by Kilby and Noyce |
|
| 1st
10th anniversary |
WCM2011
- 10th anniversary on June 15-16, 2011 in Boston, USA |
|
| 1st
10-year CDROM |
10-year WCM proceedings archive
CDROM, June 2011 |
|
