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Click here for the WCM2007 official website at NanoTech2007
Workshop on Compact Modeling at the 10th International Conference on Modeling and Simulation of Microsystems
Date
May 22-24, 2007
Venue Santa Clara Convention Center
Santa Clara, California, USA
Synopsis Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design over the past decades, and are playing an ever increasingly important role in the nanometer system-on-chip (SOC) era.  As the mainstream MOS technology is scaled into the nanometer regime, development of a truly physical and predictive compact model for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge.

Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation:

  • Bulk MOS intrinsic models
  • SOI/double-gate/multiple-gate/floating-gate MOS models
  • Bipolar/HBT/SiGe/GaN/JFET models
  • RF/noise/scalable capacitance/NQS models
  • Statistical/predictive/process-based models
  • Interconnection/passive device models
  • Extrinsic/parasitic element models
  • Reliability/hot carrier/tunneling/ESD models
  • Atomic-level/quantum-mechanical compact models
  • Numerical/TCAD/behavioral/table-based models
  • Model parameter extraction and optimization
  • Model-simulator interface and standardization
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Invited Speakers Invited speakers from all over the world are listed below:
  • Narain Arora, Cadence Design Systems, USA
  • Matthias Bucher, Technical University of Crete, Greece
  • Mansun Chan, Hong Kong University of Science and Technology, Hong Kong
  • Zuhui Chen, Xiamen University, China
  • Jamal Deen, McMaster University, Canada
  • Robert Dutton, Stanford University, USA
  • Tor Fjeldly, Norwegian University of Science and Technology, Norway
  • Jerry Fossum, University of Florida, USA
  • Carlos Galup-Montoro, Universidade Federal de Santa Catarina, Brazil
  • Chenming Hu, University of California at Berkeley, USA
  • Benjamín Iñíguez, Universitat Rovira i Virgili, Spain
  • Bin Jie, Peking University, China
  • Dirk Klaassen, NXP Semiconductors, The Netherlands
  • Mark Lundstrom, Purdue University, USA
  • Colin McAndrew, Freescale Semiconductor, USA
  • Mitiko Miura-Mattausch, Hiroshima University, Japan
  • Adelmo Ortiz-Conde, Universidad Simón Bolívar, Venezuela
  • Chih-Tang Sah, University of Florida, USA
  • Michael Schröter, University of Technology Dresden, Germany
  • Yuan Taur, University of California at San Diego, USA
  • Josef Watts, IBM, USA
  • Philip Wong, Stanford University, USA
  • Xing Zhou, Nanyang Technological University, Singapore
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Workshop
Program
WCM2007 Program has been posted below and at the following web:
http://www.nsti.org/Nanotech2007/WCM2007/

There are 23 invited papers, which are categorized in the following topic areas:

Bulk MOS intrinsic models

  • Design-Oriented Characterization and Parameter Extraction Methodologies for the EKV3 MOSFET Model

  • Matthias Bucher, Technical University of Crete, GR
  • Consistency of Compact MOSFET Models with the Pao-Sah Formulation: Consequences for Small-signal Analysis

  • Carlos Galup-Montoro, Universidade Federal de Santa Catarina, BR
  • Analytical Solutions for Long-Wide-Channel MOS Transistors With Spatially Varying Impurity Concentrations

  • Bin Jie, Peking University, CN
  • HiSIM2.4.0: Advanced MOSFET Model for the 45nm Technology Node and Beyond

  • Mitiko Miura-Mattausch, Hiroshima University, JP
Bulk MOS interface models
  • High Conentration of Interface Traps in MOS Transistor Modeling

  • Zuhui Chen, Xiamen University, CN
  • A History of Electronic Traps on Silicon Surfaces and Interfaces

  • Chih-Tang Sah, University of Florida, US
Double/multiple-gate MOS models
  • Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

  • Tor Fjeldly, Norwegian University of Science and Technology, NO
  • Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

  • Jerry Fossum, University of Florida, US
  • A Versatile Multigate MOSFET Compact Model: BSIM-MG

  • Chenming Hu, University of California at Berkeley, US
  • 3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

  • Benjamín Iñíguez, Universitat Rovira i Virgili, ES
  • A PSP Based Scalable Compact FinFET Model

  • Dirk Klaassen, Philips Research Laboratories, NE
  • A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs

  • Adelmo Ortiz-Conde, Universidad Simón Bolívar, VE
  • Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

  • Yuan Taur, University of California at San Diego, US
  • Unified Compact Model for Generic Double-Gate MOSFETs

  • Xing Zhou, Nanyang Technological University, SG
Atomic/nanoscale models
  • Nanoscale Physics for Compact Models

  • Mark Lundstrom, Purdue University, US
  • Carbon Nanotube Transistor Compact Model

  • Philip Wong, Stanford University, US
Numerical-based noise models
  • Modeling of FET Flicker Noise and Impact of Technology Scaling

  • Robert Dutton, Stanford University, US
Statistical/process-based models
  • Analysis of Halo Implanted MOSFETs

  • Colin McAndrew, Freescale Semiconductor, US
  • Modeling MOSFET Process Variation Using PSP

  • Josef Watts, IBM, US
Interconnect models
  • RCL Modeling and Characterization of X Architecture Diagonal Lines for Sub-100nm SoC Design 

  • Narain Arora, Cadence Design Systems, US
Parasitic element models
  • Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

  • Mansun Chan, Hong Kong University of Science and Technology, HK
FET/sensor models
  • Modeling the Electrical Characteristics of FET-type Sensors for Biomedical Applications

  • Jamal Deen, McMaster University, CA
Bipolar/HBT models
  • Non-standard Geometry Scaling Effects

  • Michael Schröter, University of Technology Dresden, DE
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Contributed Papers Contributed papers in the scope of "compact models for circuit simulation" are solicited.  All contributed papers has gone through Nanoch/WCM review.  Limited papers are selected for Oral presentations and the remaining accepted papers are planned for Poster presentations with a 5-min Oral Briefing.  All contributed papers will follow Nanotech paper submission guidelines at the following website:
http://www.nsti.org/Nanotech2007/WCM2007/

See Nanotech website for instructions for authors:

http://www.nsti.org/Nanotech2007/authors/

See Nanotech website for conference registration:

http://www.nsti.org/Nanotech2007/register.html

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Late News Papers C.-T. Sah and B. B. Jie, University of Florida, US
Special Overview A. N. Saxena, Rensselaer International Science Company, US
Presentation
Slides
Contributed presentation slides will be posted after the conference.
(Click on each  to download the PDF file.  © Copyright of the PDF files belongs to the respective contributors.  Last update: July 10, 2007.)
Download and save ...Download and save the entire ZIP file of presentation slides (19MB)
View SlidesXing Zhou, Opening Remark
Invited View SlidesMatthias Bucher, Design-Oriented Characterization and Parameter Extraction Methodologies for the EKV3 MOSFET Model
View SlidesCarlos Galup-Montoro, Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis
View SlidesMitiko Miura-Mattausch, HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond
View SlidesZuhui Chen, High Conentration of Interface Traps in MOS Transistor Modeling
View SlidesTor Fjeldly, Compact Modeling Framework for Short-Channel DG and GAA MOSFETs
View SlidesJerry Fossum, Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs
View SlidesBenjamín Iñíguez, 3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices
View SlidesDirk Klaassen, A PSP based scalable compact FinFET model
View SlidesAdelmo Ortiz-Conde, A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs
View SlidesXing Zhou, Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling
View SlidesMark Lundstrom, Nanoscale Physics for Compact Models
View SlidesJosef Watts, Modeling MOSFET Process Variation using PSP
View SlidesMansun Chan, Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs
View SlidesColin McAndrew, Analysis of Halo Implanted MOSFETs
View SlidesJamal Deen, Modeling the electrical characteristics of FET-type sensors for biomedical applications
View SlidesMichael Schröter, Non-standard Geometry Scaling Effects
Contributed View SlidesR. Murali, Modeling Process Variations Using a Compact Model
View SlidesN. Lu, Optimal Skew Corners for Compact Models
View SlidesQ. Chen, Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits
View SlidesM. Reyboz, Explicit Short Channel Compact Model of Independent Double Gate MOSFET
View SlidesR. Salazar, A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs
View SlidesA. S. Roy, Theory of Source-Drain Partitioning in MOSFET
View SlidesG. H. See, Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models
Posters
View SlidesA. S. Roy, A Charge Based Compact Flicker Noise Model Including Short Channel Effects
View SlidesM. Schneider, PTAT Voltage Generator Based on an MOS Voltage Divider
View SlidesL. Wagner, LINFET: A BSIM class FET model with smooth derivatives at Vds=0
View SlidesA. I. A. Cunha, Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs
View SlidesT. Nakagawa, Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model
View SlidesM. Schneider, A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range
View SlidesY. Z. Xu, A Compact Model for Temperature and Frequency Dependence of Spiral Inductor
View SlidesY. Iino, HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations
View SlidesY. Mahotin, Process Aware Hybrid SPICE Models using TCAD and Silicon Data
View SlidesB. C. Paul, A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
View SlidesJ. M. Lopez-Gonzalez, Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors
Websites for Proceedings http://www.nsti.org/procs/Nanotech2007v3/7
WCM-MSM2007
official websites
http://www.nsti.org/Nanotech2007/WCM2007/
WCM2006 website View 2006 WCM program and presentation slides
WCM2005 website View 2005 WCM program and presentation slides
WCM2004 website
View 2004 WCM program and presentation slides
WCM2003 website View 2003 WCM program and presentation slides
WCM2002 website View 2002 WCM program and presentation slides

(Updated: July 13, 2007)
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