Date
|
May 22-24,
2007 |
|
Venue |
Santa Clara Convention Center
Santa Clara, California, USA
 |
|
Synopsis |
Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM)
is one of the first of its kind in bringing people in the CM field together.
The objective of WCM is to create a truly open forum for discussion
among experts in the field as well as feedback from technology developers,
circuit designers, and CAD tool vendors. The topics cover all important
aspects of compact model development and deployment, within the main theme
- compact models for circuit simulation:
-
Bulk MOS intrinsic models
-
SOI/double-gate/multiple-gate/floating-gate
MOS models
-
Bipolar/HBT/SiGe/GaN/JFET models
-
RF/noise/scalable capacitance/NQS models
-
Statistical/predictive/process-based
models
-
Interconnection/passive device models
-
Extrinsic/parasitic element models
-
Reliability/hot carrier/tunneling/ESD
models
-
Atomic-level/quantum-mechanical compact
models
-
Numerical/TCAD/behavioral/table-based
models
-
Model parameter extraction and optimization
-
Model-simulator interface and standardization
 |
|
Invited
Speakers |
Invited speakers from all over the
world are listed below:
-
Narain Arora, Cadence Design Systems,
USA
-
Matthias Bucher, Technical University
of Crete, Greece
-
Mansun Chan, Hong Kong University
of Science and Technology, Hong Kong
-
Zuhui Chen,
Xiamen
University, China
-
Jamal Deen, McMaster
University, Canada
-
Robert Dutton,
Stanford University, USA
-
Tor Fjeldly,
Norwegian
University of Science and Technology, Norway
-
Jerry Fossum,
University
of Florida, USA
-
Carlos Galup-Montoro,
Universidade
Federal de Santa Catarina, Brazil
-
Chenming Hu, University of California
at Berkeley, USA
-
Benjamín
Iñíguez,
Universitat Rovira i Virgili, Spain
-
Bin Jie,
Peking
University, China
-
Dirk Klaassen,
NXP
Semiconductors, The Netherlands
-
Mark Lundstrom, Purdue University,
USA
-
Colin McAndrew,
Freescale
Semiconductor, USA
-
Mitiko Miura-Mattausch,
Hiroshima
University, Japan
-
Adelmo Ortiz-Conde, Universidad Simón
Bolívar, Venezuela
-
Chih-Tang Sah,
University
of Florida, USA
-
Michael Schröter,
University
of Technology Dresden, Germany
-
Yuan Taur, University
of California at San Diego, USA
-
Josef Watts, IBM,
USA
-
Philip Wong, Stanford
University, USA
-
Xing Zhou, Nanyang
Technological University, Singapore
 |
top |
Workshop
Program |
WCM2007
Program has been posted below and at the following web:
http://www.nsti.org/Nanotech2007/WCM2007/
There are 23 invited papers, which
are categorized in the following topic areas:
Bulk MOS intrinsic models
-
Design-Oriented Characterization and
Parameter Extraction Methodologies for the EKV3 MOSFET Model
Matthias Bucher, Technical University
of Crete, GR
-
Consistency of Compact MOSFET Models
with the Pao-Sah Formulation: Consequences for Small-signal Analysis
Carlos Galup-Montoro, Universidade
Federal de Santa Catarina, BR
-
Analytical Solutions for Long-Wide-Channel
MOS Transistors With Spatially Varying Impurity Concentrations
Bin Jie, Peking University, CN
-
HiSIM2.4.0: Advanced MOSFET Model for
the 45nm Technology Node and Beyond
Mitiko Miura-Mattausch, Hiroshima
University, JP
Bulk MOS interface models
-
High Conentration of Interface Traps
in MOS Transistor Modeling
Zuhui Chen,
Xiamen University, CN
-
A History of Electronic Traps on Silicon
Surfaces and Interfaces
Chih-Tang Sah, University of
Florida, US
Double/multiple-gate MOS models
-
Compact Modeling Framework for Short-Channel
DG and GAA MOSFETs
Tor Fjeldly,
Norwegian University of Science and Technology, NO
-
Modeling of Saturation-Region Characteristics
of Nanoscale Double-Gate MOSFETs
Jerry Fossum,
University of Florida, US
-
A Versatile Multigate MOSFET Compact
Model: BSIM-MG
Chenming Hu, University of California
at Berkeley, US
-
3-D Analytical Models for the Short-Channel
Effect Parameters in Undoped FinFET Devices
Benjamín Iñíguez,
Universitat Rovira i Virgili, ES
-
A PSP Based Scalable Compact FinFET
Model
Dirk Klaassen, Philips Research
Laboratories, NE
-
A Unified View of Drain Current Models
for Undoped Double-Gate SOI MOSFETs
Adelmo
Ortiz-Conde, Universidad Simón Bolívar, VE
-
Analytic Charge Model for Double-Gate
and Surrounding-Gate MOSFETs
Yuan Taur, University of California
at San Diego, US
-
Unified Compact Model for Generic Double-Gate
MOSFETs
Xing Zhou, Nanyang Technological
University, SG
Atomic/nanoscale models
-
Nanoscale Physics for Compact Models
Mark Lundstrom,
Purdue University, US
-
Carbon Nanotube Transistor Compact Model
Philip
Wong, Stanford University, US
Numerical-based noise models
-
Modeling of FET Flicker Noise and Impact
of Technology Scaling
Robert
Dutton, Stanford University, US
Statistical/process-based models
-
Analysis of Halo Implanted MOSFETs
Colin McAndrew,
Freescale Semiconductor, US
-
Modeling MOSFET Process Variation Using
PSP
Josef Watts,
IBM, US
Interconnect models
-
RCL Modeling and Characterization of
X Architecture Diagonal Lines for Sub-100nm SoC Design
Narain Arora, Cadence Design
Systems, US
Parasitic element models
-
Modeling the Geometry-Dependent Parasitics
in Multi-Fin FinFETs
Mansun Chan, Hong
Kong University of Science and Technology, HK
FET/sensor models
-
Modeling the Electrical Characteristics
of FET-type Sensors for Biomedical Applications
Jamal Deen, McMaster University,
CA
Bipolar/HBT models
-
Non-standard Geometry Scaling Effects
Michael Schröter, University
of Technology Dresden, DE
 |
|
Contributed
Papers |
Contributed
papers in the scope of "compact models for circuit simulation" are solicited.
All contributed papers has gone through Nanoch/WCM review. Limited
papers are selected for Oral presentations and the remaining accepted
papers are planned for Poster presentations with a
5-min Oral
Briefing. All contributed papers will follow Nanotech paper submission
guidelines at the following website:
http://www.nsti.org/Nanotech2007/WCM2007/
See Nanotech website for instructions
for authors:
http://www.nsti.org/Nanotech2007/authors/
See Nanotech website for conference
registration:
http://www.nsti.org/Nanotech2007/register.html

|
top |
Late
News Papers |
C.-T. Sah
and B. B. Jie, University of Florida, US
 |
|
Special
Overview |
A. N. Saxena,
Rensselaer International Science Company, US
|
|
Presentation
Slides |
Contributed
presentation slides will be posted after the conference.
(Click
on each
to download the PDF file. © Copyright
of the PDF files belongs to the respective contributors. Last update:
July 10.)
 Download
and save the entire ZIP file of presentation slides (19MB)
 Xing
Zhou, Opening Remark |
|
Invited |
 Matthias
Bucher, Design-Oriented Characterization and Parameter Extraction Methodologies
for the EKV3 MOSFET Model
 Carlos
Galup-Montoro, Consistency of compact MOSFET models with the Pao-Sah
formulation: consequences for small-signal analysis
 Mitiko
Miura-Mattausch, HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology
Node and Beyond
 Zuhui
Chen, High Conentration of Interface Traps in MOS Transistor Modeling
 Tor
Fjeldly, Compact Modeling Framework for Short-Channel DG and
GAA MOSFETs
 Jerry
Fossum, Modeling of Saturation-Region Characteristics of Nanoscale
Double-Gate MOSFETs
 Benjamín
Iñíguez, 3-D Analytical Models for the Short-Channel
Effect Parameters in Undoped FinFET Devices
 Dirk
Klaassen, A PSP based scalable compact FinFET model
 Adelmo
Ortiz-Conde, A Unified View of Drain Current Models for Undoped Double-Gate
SOI MOSFETs
 Xing
Zhou, Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling
 Mark
Lundstrom, Nanoscale Physics for Compact Models
 Josef
Watts, Modeling MOSFET Process Variation using PSP
 Mansun
Chan, Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs
 Colin
McAndrew, Analysis of Halo Implanted MOSFETs
 Jamal
Deen, Modeling the electrical characteristics of FET-type sensors for
biomedical applications
 Michael
Schröter, Non-standard Geometry Scaling Effects
 |
|
Contributed |
 R.
Murali, Modeling Process Variations Using a Compact Model
 N.
Lu, Optimal Skew Corners for Compact Models
 Q.
Chen, Impact of Gate Induced Drain Leakage and Impact Ionization Currents
on Hysteresis Modeling of PD SOI Circuits
 M.
Reyboz, Explicit Short Channel Compact Model of Independent Double
Gate MOSFET
 R.
Salazar, A Computationally Efficient Method for Evaluating Distortion
in DG MOSFETs
 A.
S. Roy, Theory of Source-Drain Partitioning in MOSFET
 G.
H. See, Gummel Symmetry with Higher-order Derivatives in MOSFET Compact
Models
 |
|
Posters
|
 A.
S. Roy, A Charge Based Compact Flicker Noise Model Including Short
Channel Effects
 M.
Schneider, PTAT Voltage Generator Based on an MOS Voltage Divider
 L.
Wagner, LINFET: A BSIM class FET model with smooth derivatives at Vds=0
 A.
I. A. Cunha, Charge-Based Threshold Voltage Definition for Undoped
Single Gate and Symmetric Double Gate MOSFETs
 T.
Nakagawa, Transition Point Consideration for Velocity Saturating Four-terminal
DG MOSFET Compact Model
 M.
Schneider, A Setup for Automatic MOSFET Mismatch Characterization under
a Wide Bias Range
 Y.
Z. Xu, A Compact Model for Temperature and Frequency Dependence of
Spiral Inductor
 Y.
Iino, HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations
 Y.
Mahotin, Process Aware Hybrid SPICE Models using TCAD and Silicon Data
 B.
C. Paul, A Circuit Compatible Analytical Device Model for Nanowire
FET Considering Ballistic and Drift-Diffusion Transport
 J.
M. Lopez-Gonzalez, Numerical Modeling for Comparison of Emitter-Base
Designs of InGaP/GaAs Heterojunction Bipolar Transistors
 |
|
Websites
for Proceedings |
http://www.nsti.org/procs/Nanotech2007v3/7
 |
|
WCM-MSM2007
official
websites |
http://www.nsti.org/Nanotech2007/WCM2007/ |
|
WCM2006
website |
View
2006 WCM program and presentation slides |
|
WCM2005
website |
View
2005 WCM program and presentation slides |
|
WCM2004
website
|
View
2004 WCM program and presentation slides |
|
WCM2003
website |
View
2003 WCM program and presentation slides |
|
WCM2002
website |
View
2002 WCM program and presentation slides |
|