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Workshop on Compact Modeling at the 10th International Conference on Modeling and Simulation of Microsystems |
Date
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May 22-24, 2007 | |
Venue | Santa Clara Convention Center
Santa Clara, California, USA |
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Synopsis | Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation:
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Invited Speakers | Invited speakers from all over the
world are listed below:
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Workshop
Program |
WCM2007
Program has been posted below and at the following web:
There are 23 invited papers, which are categorized in the following topic areas: Bulk MOS intrinsic models
Matthias Bucher, Technical University of Crete, GR Carlos Galup-Montoro, Universidade Federal de Santa Catarina, BR Bin Jie, Peking University, CN Mitiko Miura-Mattausch, Hiroshima University, JP
Zuhui Chen, Xiamen University, CN Chih-Tang Sah, University of Florida, US
Tor Fjeldly, Norwegian University of Science and Technology, NO Jerry Fossum, University of Florida, US Chenming Hu, University of California at Berkeley, US Benjamín Iñíguez, Universitat Rovira i Virgili, ES Dirk Klaassen, Philips Research Laboratories, NE Adelmo Ortiz-Conde, Universidad Simón Bolívar, VE Yuan Taur, University of California at San Diego, US Xing Zhou, Nanyang Technological University, SG
Mark Lundstrom, Purdue University, US Philip Wong, Stanford University, US
Robert Dutton, Stanford University, US
Colin McAndrew, Freescale Semiconductor, US Josef Watts, IBM, US
Narain Arora, Cadence Design Systems, US
Mansun Chan, Hong Kong University of Science and Technology, HK
Jamal Deen, McMaster University, CA
Michael Schröter, University of Technology Dresden, DE |
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Contributed Papers | Contributed
papers in the scope of "compact models for circuit simulation" are solicited.
All contributed papers has gone through Nanoch/WCM review. Limited
papers are selected for Oral presentations and the remaining accepted
papers are planned for Poster presentations with a
5-min Oral
Briefing. All contributed papers will follow Nanotech paper submission
guidelines at the following website:
See Nanotech website for instructions for authors: See Nanotech website for conference registration: |
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Late News Papers | C.-T. Sah and B. B. Jie, University of Florida, US | |
Special Overview | A. N. Saxena, Rensselaer International Science Company, US | |
Presentation
Slides |
Contributed
presentation slides will be posted after the conference.
(Click on each to download the PDF file. © Copyright of the PDF files belongs to the respective contributors. Last update: July 10.) Download and save the entire ZIP file of presentation slides (19MB) Xing Zhou, Opening Remark |
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Invited | Matthias
Bucher, Design-Oriented Characterization and Parameter Extraction Methodologies
for the EKV3 MOSFET Model
Carlos Galup-Montoro, Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis Mitiko Miura-Mattausch, HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond Zuhui Chen, High Conentration of Interface Traps in MOS Transistor Modeling Tor Fjeldly, Compact Modeling Framework for Short-Channel DG and GAA MOSFETs Jerry Fossum, Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs Benjamín Iñíguez, 3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices Dirk Klaassen, A PSP based scalable compact FinFET model Adelmo Ortiz-Conde, A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs Xing Zhou, Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling Mark Lundstrom, Nanoscale Physics for Compact Models Josef Watts, Modeling MOSFET Process Variation using PSP Mansun Chan, Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs Colin McAndrew, Analysis of Halo Implanted MOSFETs Jamal Deen, Modeling the electrical characteristics of FET-type sensors for biomedical applications Michael Schröter, Non-standard Geometry Scaling Effects |
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Contributed | R.
Murali, Modeling Process Variations Using a Compact Model
N. Lu, Optimal Skew Corners for Compact Models Q. Chen, Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits M. Reyboz, Explicit Short Channel Compact Model of Independent Double Gate MOSFET R. Salazar, A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs A. S. Roy, Theory of Source-Drain Partitioning in MOSFET G. H. See, Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models |
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Posters
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A.
S. Roy, A Charge Based Compact Flicker Noise Model Including Short
Channel Effects
M. Schneider, PTAT Voltage Generator Based on an MOS Voltage Divider L. Wagner, LINFET: A BSIM class FET model with smooth derivatives at Vds=0 A. I. A. Cunha, Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs T. Nakagawa, Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model M. Schneider, A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range Y. Z. Xu, A Compact Model for Temperature and Frequency Dependence of Spiral Inductor Y. Iino, HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations Y. Mahotin, Process Aware Hybrid SPICE Models using TCAD and Silicon Data B. C. Paul, A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport J. M. Lopez-Gonzalez, Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors |
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Websites for Proceedings | http://www.nsti.org/procs/Nanotech2007v3/7
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WCM-MSM2007
official websites |
http://www.nsti.org/Nanotech2007/WCM2007/ | |
WCM2006 website | View 2006 WCM program and presentation slides | |
WCM2005 website | View 2005 WCM program and presentation slides | |
WCM2004
website
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View 2004 WCM program and presentation slides | |
WCM2003 website | View 2003 WCM program and presentation slides | |
WCM2002 website | View 2002 WCM program and presentation slides |
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(Updated: July 13, 2007) |