E425: Engineering Design V
 
TCAD: Process and Device Simulation
 
X. ZHOU
© 1997
Step-17
Step-19

 
Step 18: Simulated Structure
 
Step-18
 
 
Step 18: Sacrificial oxidation: 20 min., 750->950 °C, N2=3 SLM, O2=50 SCCM; 30 min., 950 °C, dry O2=3 SLM; 20 min., 950->750 °C, dry N2=3 SLM.  Target: tox = 200 Å (measure).
 
Cross-Sectional View
Input Command
$step sacr_oxide 
diffusion time=20 temp=750 t.final=950 f.N2=3 f.O2=0.05  
diffusion time=30 temp=950 dryO2  
diffusion time=20 temp=950 t.final=750 inert  
$step extr_tox_sac 
extract oxide thicknes x=4 prefix="tox_sacn " suffix="(0.02) um"  out.file=vt_impl:0_0.ext  
extract oxide thicknes x=14 prefix="tox_sacp " suffix="(0.02) um"  out.file=vt_impl:0_0.ext