E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

---

---

  Step 19: Simulated Structure    
 
Step 19: Threshold implant: Implant B; Dose: 2x10¹² cm^-2; Energy: 30 KeV.
 

Cross-Sectional View

Input Command

$step implant  implant boron dose=2e+12 energy=30   $step extr_Npeak  select z=boron   extract silicon val.extr x=4 maximum prefix="Bmax_act " suffix=" cm**-3"  out.file=vt_impl:0_0.ext   extract silicon val.extr x=9 maximum prefix="Bmax_fld " suffix=" cm**-3"  out.file=vt_impl:0_0.ext   $step extr_Nsurf  select z=boron   extract silicon val.extr x=4 distance=0 prefix="Bsur_act " suffix=" cm**-3"  out.file=vt_impl:0_0.ext   extract silicon val.extr x=9 distance=0 prefix="Bsur_fld " suffix=" cm**-3"  out.file=vt_impl:0_0.ext