E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 5: Simulated Structure    
 
Step 5: N-well implant oxidation: 20 min., 750->1000 °C, N₂=3 SLM, O₂=50 SCCM; 5 min., 1000 °C, dry O₂=3 SLM; 8 min., 1000 °C, steam, H₂=3 SLM, O₂=1.7 SLM; 5 min., 1000 °C, dry O₂=3 SLM; 20 min., 1000->750 °C, dry N₂=3 SLM.  Target: t_ox = 1000 Å.
 

Cross-Sectional View

Input Command

$step implant_oxide  diffusion time=20 temp=750 t.final=1000 f.N2=3 f.O2=0.05   diffusion time=5 temp=1000 dryO2   diffusion time=8 temp=1000 f.H2=3 f.O2=1.7   diffusion time=5 temp=1000 dryO2   diffusion time=20 temp=1000 t.final=750 inert   $step extr_tox_impl  extract oxide thicknes x=4 prefix="tox_imps " suffix="(?) um"  out.file=nwell:0_0.ext   extract oxide thicknes x=14 prefix="tox_impw " suffix="(0.1) um"  out.file=nwell:0_0.ext