Hetero-Material Gate Field-Effect Transistors (HMGFET)

 

Related Publications

  1. X. Zhou, "Hetero-Material Gate Field-Effect Transistors (HMGFET's)," (Invited Paper), Proc. of the Bluetooth Technology: Devices and Processes for a Wireless World, Santa Clara, CA, Mar. 2001. View Slides

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  2. X. Zhou, "Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate-Material Engineering," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 113-120, January 2000. Download PDF

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  3. X. Zhou and W. Long, "A Novel Hetero-Material Gate (HMG) MOSFET for Deep-Submicron ULSI Technology," IEEE Trans. Electron Devices, Vol. 45, No. 12, pp. 2546-2548, December 1998. Download PDF

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Related Presentations

  1. "Hetero-Material Gate Field-Effect Transistors (HMGFET's)," Invited Talk (IEEE EDS Distinguished Lecturer Program), Bluetooth Technology: Devices and Processes for a Wireless World, IEEE EDS Santa Clara Valley Chapter, Santa Clara, CA, Mar. 16, 2001. Download PDF

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  2. "Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate Material Engineering," E3 Seminar Series in Microelectronics (µE26), Nanyang Technological University, September 2, 1999.

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  3. "Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate Material Engineering," Invited Talk, Texas Instruments, Inc., Dallas, TX, June 18, 1998; IBM T. J. Watson Research Center, Yorktown Heights, NY, June 19, 1998; Intel Corp., Portland, OR, June 25, 1998.

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