ISIC97

Process-Dependent MOS Threshold Voltage Formulation Based on 2-D Process and Device Simulations

Xing Zhou
School of Electrical and Electronic Engineering, Nanyang Technological University
Nanyang Avenue, Singapore 639798

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Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4 | Fig. 5 | Fig. 6 | Fig. 7

Fig-1

Fig. 1 Simulated or calculated threshold voltages: open symbols: simulation data; dotted lines: threshold implant dose formula fitted to the simulation data; solid symbols: theoretical equation; solid lines: effective substrate doping formula fitted to the theoretical data.

Fig-2

Fig. 2 Fitting of the pre- and exponential-factors (a and b) used in the threshold voltage formula to different gate oxidation times.

Fig-3

Fig. 3 Fitting of the parameters (a, b, and c) used in the effective substrate doping formula to different gate oxidation times.

Fig-4

Fig. 4 Effective substrate doping as a function of threshold implant dose with gate oxidation time as a parameter.

Fig-5

Fig. 5 Gate oxide thickness vs. gate oxidation time fitted to the simulation results.

Fig-6

Fig. 6 Calculated threshold voltages as a function of threshold implant dose and gate oxidation time based on the theoretical definition Eq. (1) using the formulated effective substrate doping Eq. (16) (solid symbols), and compared with the threshold voltage formula Eq. (8) (lines). The simulation data are also shown (open symbols).

Fig-7

Fig. 7 Calculated substrate-bias dependence of the threshold voltage based on the formulated effective substrate doping (lines), and compared with the simulated data (symbols).