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Click here for the WCM2020 official website at NanoTech2020
Workshop on Compact Modeling at the Nanotech 2020
June 30, 2020
Venue Gaylord National Hotel & Convention Center
National Harbor, MD, USA

Synopsis Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design over the past decades, and are playing an ever increasingly important role in the nanometer system-on-chip (SOC) era.  As the mainstream MOS technology is scaled into the nanometer regime, development of a truly physical and predictive compact model for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge.

Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

  • Intrinsic Models
    • Bulk MOSFET
    • SOI MOSFET (partial-/full-depletion)
    • Multiple-Gate FET (DG/TG/GAA)
    • High-Voltage/LDMOS
    • Thin-Film Transistor (TFT)
    • Schottky-Barrier/Tunneling/Junctionless FET (SB-FET/JLFET/TFET)
    • Bipolar/Junction (BJT/HBT/SiGe/JFET)
    • HEMT (GaN/InGaP/InGaAs)
    • Non-quasi-static
    • RF
  • Extrinsic/Interconnect Models
    • Parasitic elements
    • Passive device
    • Diode
    • Resistor
    • ESD
    • Interconnect
  • Atomic/Quantum Models
    • Ballistic device
    • Carbon-Nanotube/Graphene FET (CNFET/GFET)
    • Organic FET
  • Statistical Variability/Reliability/Noise Models
    • Statistical variability
    • Reliability/hot carrier
    • Mismatch
    • Noise
  • Multi-Level Models
    • Subcircuit model
    • Gate/block model
    • Behavioral model
    • Numerical/TCAD/table-based
  • Model Extraction and Interface
    • Parameter extraction and optimization
    • Model-simulator interface
    • Model standardization
    • Model development platform
    • Verilog-A
Invited Speakers The confirmed invited speakers are listed below:
  • Mansun Chan and Lining Zhang, Hong Kong University of Science and Technology, Hong Kong
  • Luca Larcher, Applied Materials, USA
  • Ning Lu, IBM, USA
  • Paolo Pavan and Francesco Puglisi, UniversitÓ di Modena e Reggio Emilia, Italy
  • Ujwal Radhakrishna and Dimitri Antoniadis, Massachusetts Institute of Technology, USA
  • Michael Shur, Rensselaer Polytechnic Institute, USA
  • Lan Wei, University of Waterloo, Canada
  • Zhaomin Zhu, Beibu Gulf University, China

WCM2020 Program will be posted at the Nanotech website.

Contributed Papers Contributed papers are solicitated for Oral/Poster presentations.  Please follow Nanotech website for instructions on abstract preparation and online submission by choosing an appropriate topic from the following link: 
All contributed papers will go through Nanotech abstract review and the accepted papers will be notified by the conference organizer.

Abstracts due: Jan. 24, 2020.

Full paper due: April 30, 2020.

Contributed presentation slides will be posted after the conference.

Websites for Proceedings Workshop proceedings will be available online after the conference.

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(Updated: Feb. 8, 2020)