Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

• Intrinsic Models

• Bulk MOSFET
• SOI MOSFET (partial-/full-depletion)
• Multiple-Gate FET (DG/TG/GAA)
• High-Voltage/LDMOS
• Thin-Film Transistor (TFT)
• Schottky-Barrier/Tunneling FET (SB-FET/TFET)
• Bipolar/Junction (BJT/HBT/SiGe/JFET)
• HEMT (GaN/InGaP/InGaAs)
• RF/noise

• Extrinsic/Interconnect Models

• Parasitic elements
• Passive device
• Diode
• Resistor
• ESD
• Interconnect

• Atomic/Quantum Models

• Ballistic device
• Carbon-Nanotube (CNFET)
• Organic FET

• Statistical Models

• Statistical/variability
• Reliability/hot carrier
• Numerical/TCAD/table-based

• Multi-Level Models
• Subcircuit model
• Gate/block model
• Behavioral model

• Model Extraction and Interface

• Parameter extraction and optimization
• Model-simulator interface
• Model standardization

• Narain Arora, Silterra, Malaysia
• Yu Cao, Arizona State University, USA
• Mansun Chan, Hong Kong University of Science and Technology, Hong Kong
• Christian Enz, Swiss Center for Electronics and Microtechnology, Switzerland
• Tor Fjeldly, Norwegian University of Science and Technology, Norway
• Chenming Hu and Yogesh Chauhan, University of California at Berkeley, USA
• Mitiko Miura-Mattausch, Hiroshima University, Japan
• Paolo Pavan, Luca Larcher, and Andrea Padovani, Università di Modena e Reggio Emilia, Italy
• Michael Schröter, University of Technology Dresden, Germany
• Ehrenfried Seebacher, Austriamicrosystems AG, Austria
• Yan Wang, Tsinghua University, China
• Philip Wong and Ximeng Guan, Stanford University, USA
• Xing Zhou, Nanyang Technological University, Singapore

Information for authors and abstract preparation guidelines can be found at Nanotech website:
http://www.techconnectworld.com/World2012/participate/authors/
http://www.techconnectworld.com/World2012/participate/authors/abstracts.html