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Workshop on Compact Modeling at the Nanotech 2009 |
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Date
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May 5-6, 2009 | |
| Venue | George R. Brown Convention Center
Houston, Texas, USA  |
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| Synopsis | Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:
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| Workshop
Program |
WCM2009
Program has been posted at the following web:
There are 31 contributed papers in
8 sessions.
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| Keynote | Chih-Tang
Sah, "What is
a Transistor?"
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| Contributed Papers | Contributed
papers are solicitated for Oral/Poster presentations. Please follow
Nanotech website for instructions on abstract preparation and online submission.
All contributed papers will go through Nanotech abstract review and accepted
papers will be notified by Nanotech.
See Nanotech website for instructions for authors: See Nanotech website for conference registration: |
top |
| Presentation
Slides |
Contributed
presentation slides have been posted after the conference.
(Click
on each 
to download the PDF file. © Copyright
of the PDF files belongs to the respective contributors. Last update:
Sept. 23.)
 Download
and save the entire ZIP file of presentation slides (9MB)
Workshop
Program |
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| Z.
Chen, Interface Traps in Surface-Potential-Based MOSFET Models
V.
Quenette, Dynamic Charge Sharing modeling for surface potential based
models
U.
Monga, Effective Width Modeling for Body-Contacted Devices in Silicon-On-Insulator
Technology
S.
Khandelwal, Compact Quantum Modeling Framework for Nanoscale Double-Gate
MOSFET
G.
Zhu, A Unified Compact model for FinFET and Silicon Nanowire MOSFETs
C.
Ucurum, A PSpice Compact Model for Organic Field-Effect Transistors
X.
Zhou, Compact Model Application to Statistical/Probabilistic Technology
Variations
N.
Lu, Elements of Statistical SPICE Models
C.
D’Agostino, PSP Model Equations Extension for Statistical Estimation
of Leakage Current in Nanometer CMOS Technologies Considering Process Variations
P.
Martin, 1/f Noise Modeling at Low Temperature with the EKV3 Compact
Model
C.
Wei, 1/f Noise Model for Double-Gate FinFET Biased in Weak Inversion
S.
Lin, A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon
Nanowire MOSFETs
H.
Abebe, SPICE BSIM3 Model Parameters Extraction and Optimization for
Low Temperature Application
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| Websites for Proceedings | Workshop proceedings
are available online after the conference.
Vol. 3, Chap. 9 |
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| WCM-MSM2009
official websites |
http://www.nsti.org/Nanotech2009/WCM2009/ | |
| WCM2008 website | View 2008 WCM program and presentation slides | |
| WCM2007 website | View 2007 WCM program and presentation slides | |
| WCM2006 website | View 2006 WCM program and presentation slides | |
| WCM2005 website | View 2005 WCM program and presentation slides | |
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WCM2004
website
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View 2004 WCM program and presentation slides | |
| WCM2003 website | View 2003 WCM program and presentation slides | |
| WCM2002 website | View 2002 WCM program and presentation slides |
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| (Updated: September 23, 2009) |
