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Workshop on Compact Modeling at the 8th International Conference on Modeling and Simulation of Microsystems |
Date
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May 10-12, 2005 | |
Venue | Anaheim Marriott & Convention
Center
Anaheim, California, USA |
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Synopsis | Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. For WCM-MSM2005, it is planned to have an Invited-Speaker Session, a Forum and an Evening Panel Discussion, as well as a contributed Poster Session. Highlights of WCM2005 include a Keynote paper by Prof. Chih-Tang Sah and a special joint-authored review paper by invited key contributors presented at the Forum. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation:
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Invited Speakers | Invited speakers from all over the
world are listed below:
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Keynote |
"A History of MOS Transistor Compact Modeling" |
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Workshop
Program |
Workshop
program has been posted on the Nanotech web:
There are 21 invited papers, which are categorized in the following topic areas: Bulk MOS intrinsic models
Matthias Bucher, Technical University of Crete, GR Carlos Galup-Montoro, Universidade Federal de Santa Catarina, BR Gennady Gildenblat, Pennsylvania State University, US Xing Zhou, Nanyang Technological University, SG
Mitiko Miura-Mattausch, Hiroshima University, JP Ali Niknejad, University of California at Berkeley, US Yuhua Cheng, Siliconlinx, US
Benjamín Iñíguez, Universitat Rovira i Virgili, ES Adelmo Ortiz-Conde, Universidad Simón Bolívar, VE Yuan Taur, University of California at San Diego, US
Robert Dutton, Stanford University, US
Jamal Deen, McMaster University, CA Colin McAndrew, Freescale Semiconductor, US
Narain Arora, Cadence Design Systems, US
Shiuh-Wuu Lee, Intel, US Josef Watts, IBM, US
Dirk Klaassen, Philips Research Laboratories, NE
Michael Schröter, University of Technology Dresden, DE Guofu Niu, Auburn University, US
Juin Liou, University of Central Florida, US
Luca Larcher, Università di Modena e Reggio Emilia, IT |
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Forum | A special
2-hour Forum is organized to focus on MOSFET Compact Model Utopia,
with the topic on:
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Forum chair | Colin McAndrew, Freescale Semiconductor, USA | |
Joint paper co-authors | "Advanced Compact
Models for MOSFETs"
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Forum presenters |
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Evening Panel Discussion | An evening Panel discussion
is planned, continuing the debate on different modeling approaches in the
Forum as well as on MOSFET Compact Model Development Utopia, with
the question:
Some of the proposed questions include: - Can a "best model" be built out of "best pieces" from various sources? |
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Panel chair | Narain Arora, Cadence Design Systems, USA | |
Moderator | Josef Watts, IBM, USA | |
Panelist |
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Poster Session | Poster presentations
in the scope of "compact models for circuit simulation" are solicited.
A 10-minute oral briefing for each poster paper is planned.
Contributed poster papers are listed below.
Bin B. Jie, University of Florida, US M. Schneider, Universidade Federal de Santa Catarina, BR M. Schneider, Universidade Federal de Santa Catarina, BR M. Schneider, Federal University of Bahia, BR M. Schneider, Federal University of Bahia, BR Siau Ben Chiah, Nanyang Technological University, SG Siau Ben Chiah, Nanyang Technological University, SG Hui Wan, University of California at Berkeley, US N. Sadachika, Hiroshima University, JP Qiang Chen, AMD, US Yoo-Mi Lee, IBM, US Lihui Wang, Georgia Institute of Technology, US Jin He, University of California at Berkeley, US K. Nehari, Laboratoire Matériaux et Microélectronique de Provence, FR K. Nehari, Laboratory for Materials and Microelectronics of Provence, FR T. Nakagawa, National Institute of Advanced Industrial Science and Technology, JP Toshiyuki Tsutsumi, National Institute of Advanced Industrial Science and Technology, JP Zhiping Yu, Tsinghua University, CN Philip Beow Yew Tan, Silterra Malaysia, MY Yuanzhong Zhou, Fairchild Semiconductor, US F. Badrieh, Cypress Semiconductor, US Yoshihisa Iino, Silvaco Japan, JP Y. Mahotin, Synopsys, US |
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Presentation
Slides |
(Click on
each
to download the PDF file. © Copyright
of the PDF files belongs to the respective contributors. Last update:
June.)
Download and save the entire ZIP file of presentation slides (27MB) |
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Keynote | Chih-Tang Sah, A History of MOS Transistor Compact Modeling | |
Invited | Matthias
Bucher, Advances in Charge-Based Compact MOSFET Modelling
Carlos Galup-Montoro, Comparison of Surface Potential and Charge-based MOSFET Core Models Gennady Gildenblat, Introduction to PSP MOSFET Model Xing Zhou, Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches Jamal Deen, The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs Colin McAndrew, Correlated Noise Modeling and Simulation Hans Juergen Mattausch, RF-MOSFET Model Parameter Extraction with HiSIM Ali Niknejad, Challenges in Compact Modeling for RF and Microwave Applications Yuhua Cheng, A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications Benjamín Iñíguez, Compact Modeling of Multiple-gate SOI MOSFETs Adelmo Ortiz-Conde, Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET Narain Arora, Modeling and Characterization of High Frequency Effects in ULSI Interconnects Josef Watts, Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices Dirk Klaassen, Compact Modelling of High-Voltage LDMOS Devices Michael Schröter, Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors Guofu Niu, Physics and Modeling of Noise in SiGe HBT Devices and Circuits Juin Liou, Compact Modeling of Four-Terminal Junction Field-Effect Transistors Luca Larcher, Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories |
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Forum | Colin
McAndrew, "Surface-potential versus charge based approaches to
MOSFET compact modeling"
Joint Paper, Advanced Compact Models for MOSFETs Matthias Bucher, "Inversion charge" vs. "surface potential" model Carlos Galup-Montoro, Surface Potential vs. Charge-based MOSFET Models Gennady Gildenblat, Surface Potential or Inversion Charge? Chenming Hu, Tale of Two Models Ronald van Langevelde, Surface-potential versus charge based approaches to MOSFET compact modeling Hans Juergen Mattausch (Mitiko Miura-Mattausch), Surface-Potential-Based Modeling: Indispensable for Compact Models Rafael Rios, How Critical is the Core Model Choice? Yuan Taur, Surface potential vs. Inversion charge based approaches to MOSFET compact modeling |
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Panel | Narain
Arora, "How to engage a diversified model developer community
towards the same ultimate goal?"
Matthias Bucher, "Model diversity" vs. "model standard" Gennady Gildenblat, Engaging Modeling Community Keith Green, WCM Panel Questions on SPICE MOSFET Model Standards Chenming Hu, Thoughts on Compact Model Shiuh-Wuu Lee, How to engage a diversified model developer community towards the same ultimate goal? Hans Juergen Mattausch (Mitiko Miura-Mattausch), Model standardization is good for focusing the community. On a sustained evolution of improvements for the future Samar Saha, How to engage a diversified model developer community towards the same ultimate goal? |
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Posters | Bin
B. Jie, Optimized Compact MOS Transistor Model from the Exact 4-component
Theory
Marcio Schneider, All-Region MOS Model of Mismatch due to Random Dopant Placement Marcio Schneider, Analog Design Tool Based on the ACM Model Marcio Schneider, Extraction of MOSFET Effective Channel Length and Width Based on the Transconductance-to-Current Ratio Marcio Schneider, Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio Siau Ben Chiah, One-Iteration Parameter Extraction for Length/Width-Dependent Threshold Voltage and Unified Drain Current Model Siau Ben Chiah, Unified Regional Charge-Based MOSFET Model Calibration Hui Wan, RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction Qiang Chen, An A Priori Hysteresis Modeling Methodology for Improved Efficiency and Model Accuracy in Advanced PD SOI Technologies K. Nehari, A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors Including 2D-Quantum Confinement Effects K. Nehari, Compact Modeling of Threshold Voltage in Double-Gate MOSFET Including Quantum Mechanical and Short Channel Effects T. Nakagawa, Compact Model for Ultra-Short Channel Four-Terminal DG MOSFETs for Exploring Circuit Characteristics Jin He (Hui Wan), A Compact model to Predict Quantized Sub-Band Energy Levels and Inversion Layer Centroid of MOSFET with Parabolic Potential Well Approximation Toshiyuki Tsutsumi, Device Parameter Extraction from Fabricated Double-Gate MOSFETs Zhiping Yu, A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects Philip Beow Yew Tan, How to Design for Analog Yield Using Monte Carlo Mismatch SPICE Models Yuanzhong Zhou, Modeling Snapback and Rise-time Effects in TLP Testing for ESD MOS Devices Using BSIM3 and VBIC Models F. Badrieh, Airgap and Line Slope Modeling for Interconnect Yoshihisa Iino, HiSIM-1.2: The Effective Gate Length Validation with the Capacitance Data |
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Websites for Proceedings | http://www.nsti.org/procs/Nanotech2005WCM
(Keynote, Invited, Poster) Nanotech2005-WCM Preface |
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WCM-MSM2005
official websites |
http://www.nsti.org/Nanotech2005/WCM2005/ | |
WCM2004 website | View 2004 WCM program and presentation slides | |
WCM2003 website | View 2003 WCM program and presentation slides | |
WCM2002 website | View 2002 WCM program and presentation slides |
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Click to download the program (PDF) (Updated: June 1, 2005) |