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Workshop on Compact Modeling at the 7th International Conference on Modeling and Simulation of Microsystems |
Date
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March 9-11, 2004 | |
Venue | Boston Sheraton Hotel & Copley
Convention Center
Boston, Massachusetts, USA |
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Synopsis | Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. For WCM-MSM2004, it is planned to have an Invited-Speaker Session, a contributed Poster Session, as well as a Tutorial Session. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation:
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Invited Speakers | Invited speakers
from all over the world (11 countries) are listed below:
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Workshop
Program |
There are
19 invited papers, which are categorized in the following topic areas (speakers
underlined):
Advanced device models (SiGe, GaN, Ballistic MOS):
R. W. Dutton and Chang-Hoon Choi, Stanford University, US M. S. Shur, G. Simin, A. Khan, and R. Gaska, Rensselaer Polytechnic Institute, US Z. Yu, D. Zhang, and L. Tian, Tsinghua University, CN
M. Bucher, D. Kazazis*, F. Krummenacher**, Technical University of Crete, GR, *Brown University, US, **Swiss sFederal Institute of Technology, Lausanne, CH C. Galup-Montoro, M. C. Schneider, A. Arnaud, and H. Klimach, Universidade Federal de Santa Catarina, BR R. van Langevelde, A. J. Scholten, and D. B. M. Klaassen, Philips Research Laboratories, NL M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H. J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto, Hiroshima University, JP X. Xi, J. He, M. Dunga, C.-H. Lin, B. Heyderi, H. Wan, M. Chan, A. M. Niknejad, and C. Hu, University of California at Berkeley, US X. Zhou, S. B. Chiah, K. Chandrasekaran, K. Y. Lim*, L. Chan*, and S. Chu*, Nanyang Technological University, *Chartered Semiconductor Manufacturing, SG
N. D. Arora and L. Song, Cadence Design Systems, US S.-W. Lee, P. Packan, C. Dai, and N. Hakim, Intel, US
C. McAndrew, Motorola, US
Y. Cheng, Skyworks Solutions, US S. Asgaran and M. Jamal Deen, McMaster University, CA
M. Schroter and H. Tran, University of Technology Dresden, DE
M. Chan, T. Y. Man, J. He*, X. Xi*, C.-H. Lin*, X. Lin, P. K. Ko, A. M. Niknejad, and C. Hu*, Hong Kong University of Science and Technology, HK, *University of California at Berkeley, US Q. Chen, L. Wang, R. Murali, and J. D. Meindl, Georgia Institute of Technology, US
P. Pavan, L. Larcher, and A. Marmiroli, Università di Modena e Reggio Emilia, IT
J. J. Liou and X. Gao, University of Central Florida, US |
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Poster Session | Poster presentations
in the scope of "compact models for circuit simulation" are solicited.
A 10-minute oral briefing for each poster paper is planned before
the poster presentation session. Contributed poster papers are listed
below (presenters underlined):
J. He, X. Xi, C.-H. Lin, M. Chan, A. Niknejad, and C. Hu, University of California at Berkeley, US J. He, X. Xi, M. Chan, A. Niknejad, and C. Hu, University of California at Berkeley, US J. He, X.Xi, M. Chan, A. Niknejad, and C. Hu, University of California at Berkeley, US S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim*, L. Chan*, and S. Chu*, Nanyang Technological University, *Chartered Semiconductor Manufacturing, SG K. Chandrasekaran, X. Zhou, and S. B. Chiah, Nanyang Technological University, SG J. L. Autran, D. Munteanu, O. Tintori, M. Aubert, and E. Decarre, Laboratoire Matériaux et Microélectronique de Provence, FR J. L. Autran, D. Munteanu, O. Tintori, S. Harrison*, E. Decarre, and T. Skotnicki*, Laboratory for Materials and Microelectronics of Provence, *STMicroelectronics, FR T. Nakagawa, T. Sekigawa, T. Tsutsumi*, M. Hioki, E. Suzuki, and H. Koike, National Institute of Advanced Industrial Science and Technology, *Meiji University, JP M. H. Na, J. S. Watts, E. J. Nowak, R. Q. Williams, and W. F. Clark, IBM, US M. Mierzwinski, P. O’Halloran, B. Troyanovsky, K. Mayaram*, and R. W. Dutton**, Tiburon Design Automation, *Oregon State University, **Stanford University, US S.-C. Wang, G.-W. Huang, K.-M. Chen, H.-C. Tseng*, and T.-L. Hsu*, National Nano Device Laboratories, *United Microelectronics Corporation, TW Y. Mahotin and E. Lyumkis, Integrated Systems Engineering, US Y. Iino, Silvaco Japan, JP M. S. Alam* and G. A. Armstrong, The Queen’s University of Belfast, UK, *AMU, IN H. Morris*, M. M. De Pass**, and H. Abebe, USC Information Sciences Institute, *San Jose State University, **Claremont Graduate University, US J. Slezák, A. Litschmann, S. Banáš, R. Mlcoušek, and M. Kejhar, ON Semiconductor, CZ A. S. Peng, K. M. Chen, G. W. Huang, H. Y. Chen*, and C. Y. Chang*, National Nano Device Laboratories, *National Chiao Tung University, TW |
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Tutorial Session | Two tutorials
are offered as listed below:
Matthias Bucher, Technical University of Crete, Greece Juin Liou, University of Central Florida, USA |
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Presentation
Slides |
(Click on
each
to download the PDF file. © Copyright
of the PDF files belongs to the respective contributors. Last update:
.)
Download and save the entire ZIP file of presentation slides (20MB) |
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Invited papers | Robert
Dutton, Technology Limits and Compact Model for SiGe Scaled FETs
Michael Shur, Compact Models for AlGaN/GaN MOS Devices Zhiping Yu, Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects Matthias Bucher, Geometry- and Bias-Dependence of Normalized Transconductances in Deep Submicron CMOS Carlos Galup-Montoro, Self-Consistent DC, AC, Noise and Mismatch for the MOSFET Dirk Klaassen, Recent Enhancements of MOS Model 11 Mitiko Miura-Mattausch, Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description Xing Zhou, Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs Shiuh-Wuu Lee, Emerging Challenges in Compact Modeling Colin McAndrew, R3, an Accurate JFET and 3-Terminal Diffused Resistor Model Yuhua Cheng, Advanced MOSFET Modeling for RF IC Design Jamal Deen, RF Noise Models of MOSFETs – A Review Michael Schroter, Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors Mansun Chan, Quasi-2D Compact Modeling for Double-Gate MOSFET Qiang Chen, Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs Paolo Pavan, Floating Gate Devices: Operation and Compact Modeling Juin Liou, Compact MOSFET Model for ESD Applications |
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Posters | Jin
He, A Non-Charge-Sheet Analytical Theory of Undoped Symmetric Double-Gate
MOSFETs from the Exact Solution of Poisson's Equation using SPP Approach
Jin He, An Exact Analytical Model of Undoped Body MOSFETs using the SPP Approach Jin He, Linear Cofactor Difference Extrema of MOSFET's Drain Current and Their Application in Parameter Extraction Karthik Chandrasekaran, Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity Karthik Chandrasekaran, Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs T. Nakagawa, Improved Compact Model for Four-Terminal DG MOSFETs Marek Mierzwinski, New Capabilities for Verilog-A Implementations of Compact Device Models Sheng-Chun Wang, A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model Yuri Mahotin, Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions Yoshihisa Iino, A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology Henok Abebe, Analytic Formulae for the Impact Ionization Rate for Use in Compact Models of Ultra-Short Semiconductor Devices Jirí Slezák, On the Correlations Between Model Process Parameters in Statistical Modeling |
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Tutorials | Matthias
Bucher, Review of the EKV3.0 MOSFET Model
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Websites for Proceedings | http://www.nsti.org/procs/Nanotech2004v2/3
(Vol. 2, Chapter 3: Compact Modeling) |
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WCM-MSM2004
official websites |
http://www.nsti.org/Nanotech2004/WCM2004/ | |
WCM2003 website | View 2003 WCM program and presentation slides | |
WCM2002 website | View 2002 WCM program and presentation slides |
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Click to download the program (PDF) (Updated: April 11, 2004) |