E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 28: Simulated Structure    
 
Step 28: N+ anneal: 20 min., 750->950 °C, N₂=3 SLM; 60 min., 950 °C, dry N₂=3 SLM; 20 min., 950->750 °C, dry N₂=3 SLM. Target: x_j = 0.35 µm.
 

Cross-Sectional View

Input Command

$step N+ s/d_anneal  diffusion time=20 temp=750 t.final=950 inert   diffusion time=60 temp=950 inert   diffusion time=20 temp=950 t.final=750 inert   $step extr_Npeak  select z=arsenic   extract silicon val.extr x=4 maximum prefix="Amax_nsd " suffix=" cm**-3"  out.file=nsd_impl:0_0.ext   $step extr_Nsurf  select z=arsenic   extract silicon val.extr x=4 distance=0 prefix="Asur_nsd " suffix=" cm**-3"  out.file=nsd_impl:0_0.ext   $step extr_xj_nsd  select z=doping   extract silicon d.extr x=4 value=0 prefix="xj_nsd " suffix="(0.35) um"  out.file=nsd_impl:0_0.ext