E425: Engineering Design V
TCAD: Process and Device Simulation
X. ZHOU
©
1997
Step 22: Simulated Structure
Step 22:
Poly-Si deposition
:
Deposit polysilicon: 4500 Å; P-doped: 10
20
cm
-3
; Temperature: 610 °C.
Cross-Sectional View
Input Command
$step deposit_poly1
deposit poly thick=0.45 spaces=2 phos=1e20 concen temp=610