E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 21: Simulated Structure    
 
Step 21: Gate oxidation: 20 min., 750->950 °C, N₂=3 SLM, O₂=50 SCCM; 60 min., 950 °C, dry O₂=3 SLM; 20 min., 950 °C, dry N₂=3 SLM; 20 min., 950->750 °C, dry N₂=3 SLM.  Target: t_ox = 300 Å.
 

Cross-Sectional View	Input Command
	$step gate_oxide  diffusion time=20 temp=750 t.final=950 f.N2=3 f.O2=0.05   diffusion time=60 temp=950 dryO2   diffusion time=20 temp=950 inert   diffusion time=20 temp=950 t.final=750 inert   $step extr_tox_gate  extract oxide thicknes x=4 prefix="tox_gn " suffix="(0.03) um"  out.file=gate_ox:0_0.ext   extract oxide thicknes x=14 prefix="tox_gp " suffix="(0.03) um"  out.file=gate_ox:0_0.ext