E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 15: Simulated Structure    
 
Step 15: Photoresist removal: Strip all photoresist; Etch Si₃N₄: dt_SiN.  (Remaining t_SiN = 1300 Å)
 

Cross-Sectional View	Input Command
	$step strip_photo  etch photo all   $step etch_nitride  etch nitride thicknes=0.2   $step extr_Npeak  select z=boron   extract silicon val.extr x=9 maximum prefix="Bmax_fld " suffix=" cm**-3"  out.file=field_impl:0_0.ext   $step extr_Nsurf  select z=boron   extract silicon val.extr x=9 distance=0 prefix="Bsur_fld " suffix=" cm**-3"  out.file=field_impl:0_0.ext